Inventor · disambiguated record
Fumikazu Imai
Also filed as: IMAI FUMIKAZU
19 granted patents·2 pending applications·44 citations·filing 2001–2020
91Inventor score
Files withFUJI ELECTRIC CO LTD17MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2FUJIFILM CORP1KINOSHITA AKIMASA1
Top patents by PatentIndex Score
21 records- 0191US9685333B2Manufacturing method of silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Jun 20, 2017·7 cites·6 claims
- 0286US9129939B2SiC semiconductor device and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2013·Granted Sep 8, 2015·6 cites·7 claims
- 0380US10580870B2Method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Mar 3, 2020·2 cites·4 claims
- 0479US6424478B2Apparatus for recording and reproducing digital data and method for the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jul 23, 2002·12 cites·16 claims
- 0578US9401411B2SiC semiconductor device and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2015·Granted Jul 26, 2016·2 cites·3 claims
- 0676US9240451B2Silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2014·Granted Jan 19, 2016·4 cites·12 claims
- 0775US10600921B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Mar 24, 2020·2 cites·8 claims
- 0870US9887270B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Feb 6, 2018·1 cites·12 claims
- 0968US6362928B2Apparatus for recording and reproducing digital data and method for the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 26, 2002·6 cites·12 claims
- 1065US11158503B2Silicon carbide semiconductor substrateFUJI ELECTRIC CO LTD·Filed 2020·Granted Oct 26, 2021·0 cites·2 claims
- 1164US9263543B2Method for manufacturing a semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2014·Granted Feb 16, 2016·1 cites·14 claims
- 1258US9269579B2Method for manufacturing silicon carbide semiconductor deviceKINOSHITA AKIMASA·Filed 2012·Granted Feb 23, 2016·1 cites·15 claims
- 1355US10103220B2Method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Oct 16, 2018·0 cites·9 claims
- 1454US10615031B2Silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor substrateFUJI ELECTRIC CO LTD·Filed 2017·Granted Apr 7, 2020·0 cites·7 claims
- 1554US9929232B2Semiconductor device comprises two or more regions that have a same impurity concentration and differing carrier concentrationsFUJI ELECTRIC CO LTD·Filed 2017·Granted Mar 27, 2018·0 cites·4 claims
- 1653US10600872B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Mar 24, 2020·0 cites·5 claims
- 1748US9159792B2SiC semiconductor device and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2014·Granted Oct 13, 2015·0 cites·9 claims
- 1848US2008173903A1Solid-state image pickup elementFUJIFILM CORP·Filed 2007·Application pending·0 cites
- 1946US10374050B2Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Aug 6, 2019·0 cites·10 claims
- 2043US2019245079A1Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Application pending·0 cites
- 2142US10032894B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jul 24, 2018·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →