Inventor · disambiguated record
Fumio Kawamura
Also filed as: KAWAMURA FUMIO
75 granted patents·10 pending applications·1,072 citations·filing 1980–2022
99Inventor score
Files withHITACHI LTD18RICOH KK16MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8NGK INSULATORS LTD4IWAI MAKOTO3
Top patents by PatentIndex Score
85 records- 0194US7381268B2Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitrideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Jun 3, 2008·12 cites·38 claims
- 0293US5153073AElectroluminescent deviceRICOH KK·Filed 1991·Granted Oct 6, 1992·80 cites·8 claims
- 0392US7435295B2Method for producing compound single crystal and production apparatus for use thereinMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Oct 14, 2008·11 cites·32 claims
- 0491US5448696AMap information system capable of displaying layout informationHITACHI LTD·Filed 1993·Granted Sep 5, 1995·143 cites·17 claims
- 0591US4654172AMethod for processing radioactive waste resinHITACHI LTD·Filed 1984·Granted Mar 31, 1987·31 cites·24 claims
- 0689US7754012B2Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitridePANASONIC CORP·Filed 2008·Granted Jul 13, 2010·6 cites·27 claims
- 0789US7459023B2Method for producing semiconductor crystalTOYODA GOSEI KK·Filed 2006·Granted Dec 2, 2008·7 cites·20 claims
- 0888US5118986AElectroluminescent deviceRICOH KK·Filed 1990·Granted Jun 2, 1992·36 cites·15 claims
- 0987US6878360B1Carbon fibrous matter, production device of carbon fibrous matter, production method of carbon fibrous matter and deposit prevention device for carbon fibrous matterNIKKISO CO LTD·Filed 2000·Granted Apr 12, 2005·37 cites·13 claims
- 1086US5981115AReversible thermosensitive recording materialRICOH KK·Filed 1997·Granted Nov 9, 1999·42 cites·40 claims
- 1186US5467444AMethod of three-dimensional display of object-oriented figure information and system thereofHITACHI LTD·Filed 1991·Granted Nov 14, 1995·86 cites·30 claims
- 1285US7905958B2Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Mar 15, 2011·10 cites·8 claims
- 1385US7815733B2Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystalNGK INSULATORS LTD·Filed 2007·Granted Oct 19, 2010·5 cites·16 claims
- 1483US7580651B2Image forming apparatus and method of controlling energy saving modeRICOH KK·Filed 2005·Granted Aug 25, 2009·9 cites·46 claims
- 1583US7419545B2Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Sep 2, 2008·4 cites·18 claims
- 1682US6261992B1Reversible thermosensitive recording material and recording method and apparatus thereforRICOH KK·Filed 1999·Granted Jul 17, 2001·33 cites·17 claims
- 1780US7288152B2Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the sameYUSUKE MORI·Filed 2004·Granted Oct 30, 2007·31 cites·28 claims
- 1880US4448711AProcess for producing zeolite adsorbent and process for treating radioactive liquid waste with the zeolite adsorbentHITACHI LTD·Filed 1980·Granted May 15, 1984·32 cites·8 claims
- 1979US8084281B2Semiconductor substrate, electronic device, optical device, and production methods thereforSHIBATA NAOKI·Filed 2007·Granted Dec 27, 2011·6 cites·20 claims
- 2079US6090748AReversible thermosensitive recording material and recording method and recording apparatus thereforRICOH KK·Filed 1998·Granted Jul 18, 2000·31 cites·15 claims
- 2178US6154243AReversible thermal recording method and apparatus thereforRICOH KK·Filed 1998·Granted Nov 28, 2000·36 cites·28 claims
- 2277US7176115B2Method of manufacturing Group III nitride substrate and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Feb 13, 2007·19 cites·58 claims
- 2376US8025728B2Method for manufacturing single crystal of nitrideNGK INSULATORS LTD·Filed 2008·Granted Sep 27, 2011·2 cites·7 claims
- 2476US7842133B2Single crystal growing methodNGK INSULATORS LTD·Filed 2008·Granted Nov 30, 2010·2 cites·11 claims
- 2575US7833347B2Process and apparatus for producing nitride single crystalNGK INSULATORS LTD·Filed 2008·Granted Nov 16, 2010·7 cites·2 claims
- 2675US5981429AReversible thermosensitive recording mediumRICOH KK·Filed 1997·Granted Nov 9, 1999·25 cites·8 claims
- 2773US7172741B2Method for reprocessing spent nuclear fuelTOKYO ELECTRIC POWER CO·Filed 2004·Granted Feb 6, 2007·13 cites·12 claims
- 2873US2022204353A1Method for Synthesizing Ammonia, and Apparatus for Said MethodNAT INST MATERIALS SCIENCE·Filed 2022·Application pending·0 cites
- 2972US4636335AMethod of disposing radioactive ion exchange resinHITACHI LTD·Filed 1983·Granted Jan 13, 1987·27 cites·16 claims
- 3072US4481089AMethod for decontaminating metals contaminated with radioactive substancesHITACHI LTD·Filed 1984·Granted Nov 6, 1984·16 cites·13 claims
- 3170US8574361B2Group-III element nitride crystal producing method and group-III element nitride crystalYAMADA OSAMU·Filed 2008·Granted Nov 5, 2013·2 cites·12 claims
- 3270US5093210AElectroluminescent deviceRICOH KK·Filed 1990·Granted Mar 3, 1992·32 cites·3 claims
- 3368US8187507B2GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatusMORI YUSUKE·Filed 2007·Granted May 29, 2012·3 cites·12 claims
- 3467US7309534B2Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Dec 18, 2007·10 cites·55 claims
- 3566US11407646B2Method for synthesizing ammonia, and apparatus for said methodNAT INST MATERIALS SCIENCE·Filed 2017·Granted Aug 9, 2022·0 cites·15 claims
- 3666US6090192AReversible thermosensitive coloring composition and reversible thermosensitive recording medium using sameRICOH KK·Filed 1998·Granted Jul 18, 2000·15 cites·3 claims
- 3766US4505851AProcess for solidifying radioactive waste pelletsHITACHI LTD·Filed 1982·Granted Mar 19, 1985·17 cites·52 claims
- 3865US2014030549A1Group iii element nitride crystal producing method and group-iii element nitride crystalYAMADA OSAMU·Filed 2013·Application pending·0 cites
- 3964US8227324B2Method for producing group III nitride-based compound semiconductor crystalYAMAZAKI SHIRO·Filed 2007·Granted Jul 24, 2012·2 cites·20 claims
- 4064US7125801B2Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Oct 24, 2006·8 cites·29 claims
- 4163US9017479B2Nitride single crystal manufacturing apparatusIWAI MAKOTO·Filed 2008·Granted Apr 28, 2015·3 cites·5 claims
- 4263US7507292B2Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared therebyOSAKA IND PROMOTION ORG·Filed 2003·Granted Mar 24, 2009·5 cites·24 claims
- 4363US6794334B2Thermo reversible recording medium, member having information memorizing part, thermo reversible recording label, method of and apparatus for image processingRICOH KK·Filed 2001·Granted Sep 21, 2004·5 cites·20 claims
- 4463US4578325APower storage system using sodium-sulfur batteriesHITACHI LTD·Filed 1984·Granted Mar 25, 1986·20 cites·26 claims
- 4562US8657955B2Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystalIWAI MAKOTO·Filed 2009·Granted Feb 25, 2014·0 cites·2 claims
- 4662US7255742B2Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 14, 2007·4 cites·26 claims
- 4761US5955225AReversible thermosensitive coloring composition and reversible thermosensitive recording medium using sameRICOH KK·Filed 1997·Granted Sep 21, 1999·14 cites·4 claims
- 4861US4587232AInorganic adsorbent and process for production thereofHITACHI LTD·Filed 1983·Granted May 6, 1986·8 cites·16 claims
- 4959US5891823AReversible thermosensitive recording mediumRICOH KK·Filed 1997·Granted Apr 6, 1999·11 cites·1 claims
- 5057US9624604B2Method for synthesizing hexagonal tungsten nitride, and hexagonal tungsten nitrideNAT INST FOR MATERIALS SCIENCE·Filed 2013·Granted Apr 18, 2017·1 cites·20 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →