Inventor · disambiguated record
Fu-Hai Li
Also filed as: LI FU · Li fu-hai
3 granted patents·9 pending applications·8 citations·filing 2011–2025
57Inventor score
Top patents by PatentIndex Score
12 records- 0182US8609460B2Semiconductor structure and fabricating method thereofLIU PO-TSUN·Filed 2011·Granted Dec 17, 2013·8 cites·8 claims
- 0275US12495723B2Phase change material (PCM) switch with variably spaced spreader layer structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 9, 2025·0 cites·20 claims
- 0374US2024355949A1Energy harvest and storage device for semiconductor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0474US2025366370A1Pyroelectric device for a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0569US12057516B2Energy harvest and storage device for semiconductor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 0665US2023413673A1Pyroelectric device for a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 0764US2024410079A13D structured inorganic nanoscale product and printing method and application thereofUNIV TSINGHUA·Filed 2024·Application pending·0 cites
- 0858US2025218973A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0955US2024387399A1Rfsoi semiconductor structures including an electromagnetic shield layer and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1051US2024040799A1Ferroelectric tunnel junction deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1150US2024130257A1Spreader configuration for phase change material (pcm) switch and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1250US2024099167A1Phase change material switch with improved thermal dissipation and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →