Inventor · disambiguated record
Fujio Masuoka
Also filed as: MASUOKA FUJIO · NATORI KENJI
393 granted patents·20 pending applications·5,757 citations·filing 1976–2022
99Inventor score
Files withUNISANTIS ELECT SINGAPORE PTE239TOSHIBA KK67MASUOKA FUJIO61TOKYO SHIBAURA ELECTRIC CO22UNISANTIS ELECTRONICS JP LTD10
Top patents by PatentIndex Score
413 records- 0199US4959812AElectrically erasable programmable read-only memory with NAND cell structureTOSHIBA KK·Filed 1988·Granted Sep 25, 1990·652 cites·15 claims
- 0299US4466081ASemiconductor memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Aug 14, 1984·320 cites·15 claims
- 0398US9252276B2Semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2015·Granted Feb 2, 2016·14 cites·1 claims
- 0498US9202922B2Semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2015·Granted Dec 1, 2015·13 cites·1 claims
- 0598US9024376B2Vertical transistor with dielectrically-isolated work-function metal electrodes surrounding the semiconductor pillarUNISANTIS ELECT SINGAPORE PTE·Filed 2014·Granted May 5, 2015·30 cites·10 claims
- 0698US8497548B2Semiconductor device including a MOS transistor and production method thereforMASUOKA FUJIO·Filed 2010·Granted Jul 30, 2013·41 cites·8 claims
- 0798US8212311B2Semiconductor device having increased gate length implemented by surround gate transistor arrangementsMASUOKA FUJIO·Filed 2010·Granted Jul 3, 2012·44 cites·8 claims
- 0898US8188537B2Semiconductor device and production method thereforMASUOKA FUJIO·Filed 2010·Granted May 29, 2012·57 cites·5 claims
- 0998US5258635AMOS-type semiconductor integrated circuit deviceTOSHIBA KK·Filed 1991·Granted Nov 2, 1993·249 cites·14 claims
- 1098US4460835ASemiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generatorTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Jul 17, 1984·86 cites·14 claims
- 1197US9281472B2Semiconductor device and method for producing semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2014·Granted Mar 8, 2016·11 cites·18 claims
- 1297US9246001B2Semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2015·Granted Jan 26, 2016·15 cites·1 claims
- 1397US9054085B2Semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2014·Granted Jun 9, 2015·19 cites·1 claims
- 1497US8772175B2Method for manufacturing semiconductor device and semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2012·Granted Jul 8, 2014·22 cites·7 claims
- 1597US8735971B2Method for producing semiconductor device and semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2012·Granted May 27, 2014·29 cites·3 claims
- 1697US8647947B2Semiconductor device including a MOS transistor and production method thereforUNISANTIS ELECT SINGAPORE PTE·Filed 2013·Granted Feb 11, 2014·27 cites·3 claims
- 1797US8378400B2Solid state imaging deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2011·Granted Feb 19, 2013·28 cites·11 claims
- 1897US8039893B2CMOS inverter coupling circuit comprising vertical transistorsUNISANTIS ELECTRONICS JP LTD·Filed 2008·Granted Oct 18, 2011·67 cites·61 claims
- 1997US6727544B2Semiconductor memory including cell(s) with both charge storage layer(s) and control gate laterally surrounding island-like semiconductor layerMASUOKA FUJIO·Filed 2002·Granted Apr 27, 2004·148 cites·32 claims
- 2097US4939690AElectrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variationTOSHIBA KK·Filed 1988·Granted Jul 3, 1990·142 cites·15 claims
- 2196US10211340B2Method for producing pillar-shaped semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2018·Granted Feb 19, 2019·8 cites·15 claims
- 2296US9029923B2Semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2014·Granted May 12, 2015·14 cites·1 claims
- 2396US8916478B2Method for manufacturing semiconductor device and semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2013·Granted Dec 23, 2014·20 cites·7 claims
- 2496US8823066B2Method for producing semiconductor device and semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2014·Granted Sep 2, 2014·16 cites·1 claims
- 2596US8564034B2Solid-state imaging deviceMASUOKA FUJIO·Filed 2012·Granted Oct 22, 2013·19 cites·9 claims
- 2696US8080458B2Semiconductor device and manufacturing method thereofMASUOKA FUJIO·Filed 2010·Granted Dec 20, 2011·59 cites·23 claims
- 2796US7872287B2Solid-state imaging deviceUNISANTIS ELECTRONICS JP LTD·Filed 2008·Granted Jan 18, 2011·34 cites·47 claims
- 2896US4243997ASemiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1978·Granted Jan 6, 1981·73 cites·12 claims
- 2995US10734391B2SGT-including pillar-shaped semiconductor device and method for producing the sameUNISANTIS ELECT SINGAPORE PTE·Filed 2019·Granted Aug 4, 2020·7 cites·6 claims
- 3095US9368551B2Semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2015·Granted Jun 14, 2016·10 cites·8 claims
- 3195US8372713B2Semiconductor device and production method thereforUNISANTIS ELECT SINGAPORE PTE·Filed 2012·Granted Feb 12, 2013·18 cites·4 claims
- 3295US5371024ASemiconductor device and process for manufacturing the sameTOSHIBA KK·Filed 1992·Granted Dec 6, 1994·128 cites·22 claims
- 3395US4943944ASemiconductor memory using dynamic ram cellsTOSHIBA KK·Filed 1988·Granted Jul 24, 1990·91 cites·21 claims
- 3495US4803529AElectrically erasable and electrically programmable read only memoryTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Feb 7, 1989·79 cites·29 claims
- 3594US9431501B2Method for producing semiconductor device and semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2015·Granted Aug 30, 2016·8 cites·4 claims
- 3694US9117690B2Method for producing semiconductor device and semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2013·Granted Aug 25, 2015·12 cites·1 claims
- 3794US8373235B2Semiconductor memory device and production method thereforUNISANTIS ELECT SINGAPORE PTE·Filed 2010·Granted Feb 12, 2013·22 cites·18 claims
- 3894US7304343B2Semiconductor memory device and manufacturing method for the sameFUJIO MASUOKA·Filed 2005·Granted Dec 4, 2007·39 cites·11 claims
- 3994US6933556B2Semiconductor memory with gate at least partially located in recess defined in vertically oriented semiconductor layerSHARP KK·Filed 2002·Granted Aug 23, 2005·88 cites·46 claims
- 4093US12096608B2Pillar-shaped semiconductor device and manufacturing method thereofUNISANTIS ELECT SINGAPORE PTE·Filed 2021·Granted Sep 17, 2024·2 cites·10 claims
- 4193US11862464B2Method for manufacturing three-dimensional semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2021·Granted Jan 2, 2024·2 cites·14 claims
- 4293US8901640B2Semiconductor element and semiconductor deviceMASUOKA FUJIO·Filed 2010·Granted Dec 2, 2014·17 cites·5 claims
- 4393US6870215B2Semiconductor memory and its production processMASUOKA FUJIO·Filed 2002·Granted Mar 22, 2005·99 cites·22 claims
- 4493US5615163ASemiconductor memory deviceTOSHIBA KK·Filed 1996·Granted Mar 25, 1997·97 cites·12 claims
- 4592US9293703B2Memory device, semiconductor device, method for producing memory device, and method for producing semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2014·Granted Mar 22, 2016·5 cites·7 claims
- 4692US9142645B2Method for producing semiconductor device and semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2014·Granted Sep 22, 2015·9 cites·6 claims
- 4792US8669601B2Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductorMASUOKA FUJIO·Filed 2012·Granted Mar 11, 2014·14 cites·19 claims
- 4892US8212298B2Semiconductor storage device and methods of producing itMASUOKA FUJIO·Filed 2010·Granted Jul 3, 2012·16 cites·12 claims
- 4992US5523980ASemiconductor memory deviceTOSHIBA KK·Filed 1994·Granted Jun 4, 1996·99 cites·10 claims
- 5092US4687954ACMOS hysteresis circuit with enable switch or natural transistorTOSHIBA KK·Filed 1985·Granted Aug 18, 1987·57 cites·7 claims
Showing the top 50 of 413 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →