Inventor · disambiguated record
Fumihiko Noro
Also filed as: NORO FUMIHIKO
23 granted patents·1 pending application·175 citations·filing 1994–2009
95Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD14PANASONIC CORP6MATSUSHITA ELECTRONICS CORP2MATSUSHITA ELECTRONICS COMPANY1TOWER SEMICONDUCTOR LTD1
Top patents by PatentIndex Score
24 records- 0187US5838039ASemiconductor memory having a tunneling regionMATSUSHITA ELECTRONICS CORP·Filed 1996·Granted Nov 17, 1998·54 cites·12 claims
- 0285US7807557B2Method of forming a semiconductor device having a trapping film for charge accumulationPANASONIC CORP·Filed 2007·Granted Oct 5, 2010·10 cites·10 claims
- 0381US7446381B2Semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Nov 4, 2008·8 cites·11 claims
- 0475US6867118B2Semiconductor memory and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 15, 2005·17 cites·11 claims
- 0575US6545312B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Apr 8, 2003·16 cites·7 claims
- 0671US7598589B2Semiconductor devicePANASONIC CORP·Filed 2005·Granted Oct 6, 2009·4 cites·4 claims
- 0767US6642572B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 4, 2003·10 cites·7 claims
- 0866US7476943B2Semiconductor device having diffusion layers as bit lines and method for manufacturing the samePANASONIC CORP·Filed 2006·Granted Jan 13, 2009·2 cites·7 claims
- 0956US7060627B2Method of decreasing charging effects in oxide-nitride-oxide (ONO) memory arraysTOWER SEMICONDUCTOR LTD·Filed 2003·Granted Jun 13, 2006·7 cites·15 claims
- 1054US6872624B2Method of fabricating nonvolatile semiconductor memory deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 29, 2005·7 cites·17 claims
- 1154US6143609AMethod for forming semiconductor memory deviceMATSUSHITA ELECTRONICS CORP·Filed 1996·Granted Nov 7, 2000·12 cites·6 claims
- 1253US7704803B2Semiconductor device having diffusion layers as bit lines and method for manufacturing the samePANASONIC CORP·Filed 2008·Granted Apr 27, 2010·0 cites·6 claims
- 1351US7781291B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2009·Granted Aug 24, 2010·0 cites·6 claims
- 1448US6686622B2Semiconductor memory device and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 3, 2004·3 cites·8 claims
- 1547US6828621B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 7, 2004·2 cites·8 claims
- 1646US6784040B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 31, 2004·2 cites·59 claims
- 1746US6558997B2Method for fabricating the control and floating gate electrodes without having their upper surface silicidedMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted May 6, 2003·4 cites·8 claims
- 1845US6830973B2Nonvolatile semiconductor memory device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Dec 14, 2004·2 cites·4 claims
- 1943US6791139B2Semiconductor memory and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 14, 2004·3 cites·2 claims
- 2040US7951679B2Method for fabricating semiconductor devicePANASONIC CORP·Filed 2005·Granted May 31, 2011·0 cites·6 claims
- 2138US2005051837A1Nonvolatile semiconductor memory device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Application pending·0 cites
- 2234US6734067B2Method of forming a semiconductor storage deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted May 11, 2004·0 cites·13 claims
- 2334US5491101AManufacturing method of non-volatile semiconductor memory devicesMATSUSHITA ELECTRONICS COMPANY·Filed 1994·Granted Feb 13, 1996·8 cites·3 claims
- 2428US6320217B1Semiconductor memory deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Nov 20, 2001·4 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →