Inventor · disambiguated record
Fuchia Shone
Also filed as: SHONE FUCHIA
26 granted patents·1,560 citations·filing 1993–1999
98Inventor score
Top patents by PatentIndex Score
26 records- 0198US5526307AFlash EPROM integrated circuit architectureMACRONIX INT CO LTD·Filed 1994·Granted Jun 11, 1996·272 cites·36 claims
- 0297US5399891AFloating gate or flash EPROM transistor array having contactless source and drain diffusionsMACRONIX INT CO LTD·Filed 1994·Granted Mar 21, 1995·145 cites·54 claims
- 0394US5539688AFast pre-programming circuit for floating gate memoryMACRONIX INT CO LTD·Filed 1995·Granted Jul 23, 1996·88 cites·16 claims
- 0493US5778440AFloating gate memory device and method for terminating a program load cycle upon detecting a predetermined address/data patternMACRONIX INT CO LTD·Filed 1995·Granted Jul 7, 1998·140 cites·40 claims
- 0593US5745410AMethod and system for soft programming algorithmMACRONIX INT CO LTD·Filed 1995·Granted Apr 28, 1998·137 cites·50 claims
- 0693US5615153AFast flash EPROM programming and pre-programming circuit designFiled 1995·Granted Mar 25, 1997·79 cites·8 claims
- 0792US5836772AInterpoly dielectric processMACRONIX INT CO LTD·Filed 1997·Granted Nov 17, 1998·96 cites·11 claims
- 0891US5563823AFast FLASH EPROM programming and pre-programming circuit designMACRONIX INT CO LTD·Filed 1995·Granted Oct 8, 1996·66 cites·16 claims
- 0990US5963476AFowler-Nordheim (F-N) tunneling for pre-programming in a floating gate memory deviceMACRONIX INT CO LTD·Filed 1997·Granted Oct 5, 1999·88 cites·50 claims
- 1088US5633185AMethod of making a non-volatile memory cellMACRONIX INT CO LTD·Filed 1995·Granted May 27, 1997·61 cites·15 claims
- 1183US5619052AInterpoly dielectric structure in EEPROM deviceMACRONIX INT CO LTD·Filed 1994·Granted Apr 8, 1997·47 cites·23 claims
- 1280US6031771AMemory redundancy circuit using single polysilicon floating gate transistors as redundancy elementsMACRONIX INT CO LTD·Filed 1998·Granted Feb 29, 2000·47 cites·24 claims
- 1378US5691938ANon-volatile memory cell and array architectureMACRONIX INT CO LTD·Filed 1994·Granted Nov 25, 1997·31 cites·23 claims
- 1475US5699298AFlash memory erase with controlled band-to-band tunneling currentMACRONIX INT CO LTD·Filed 1996·Granted Dec 16, 1997·41 cites·28 claims
- 1573US5618742AMethod of making flash EPROM with conductive sidewall spacer contacting floating gateMACRONIX INTERNATIOAL LTD·Filed 1994·Granted Apr 8, 1997·40 cites·10 claims
- 1670US5821909AFast flash EPROM programming and pre-programming circuit designMACRONIX INT CO LTD·Filed 1996·Granted Oct 13, 1998·18 cites·3 claims
- 1767US6119226AMemory supporting multiple address protocolsMACRONIX INT CO LTD·Filed 1998·Granted Sep 12, 2000·27 cites·18 claims
- 1866US5834351ANitridation process with peripheral region protectionMACRONIX INT CO LTD·Filed 1995·Granted Nov 10, 1998·23 cites·11 claims
- 1966US5822243ADual mode memory with embedded ROMMACRONIX INT CO LTD·Filed 1997·Granted Oct 13, 1998·25 cites·22 claims
- 2062US5563822AFast flash EPROM programming and pre-programming circuit designMACRONIX INT CO LTD·Filed 1995·Granted Oct 8, 1996·13 cites·6 claims
- 2161US5956273AFast flash EPROM programming and pre-programming circuit designMACRONIX INT CO LTD·Filed 1998·Granted Sep 21, 1999·12 cites·29 claims
- 2260US5453391AMethod for manufacturing a contactless floating gate transistor arrayMACRONIX INT CO LTD·Filed 1993·Granted Sep 26, 1995·14 cites·21 claims
- 2355US6400634B1Technique for increasing endurance of integrated circuit memoryMACRONIX INT CO LTD·Filed 1997·Granted Jun 4, 2002·16 cites·28 claims
- 2455US6004848AMethod of forming a multi-level memory array with channel bias algorithmMACRONIX INT CO LTD·Filed 1997·Granted Dec 21, 1999·13 cites·4 claims
- 2553US5592000ANon-volatile semiconductor memory device programmable and erasable at low voltageMACRONIX INT CO LTD·Filed 1995·Granted Jan 7, 1997·15 cites·3 claims
- 2647US6166956AFast flash EPROM programming and pre-programming circuit designMACRONIX INT CO LTD·Filed 1999·Granted Dec 26, 2000·6 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →