Inventor · disambiguated record
Fu-An Wu
Also filed as: WU FU-AN
44 granted patents·4 pending applications·159 citations·filing 2006–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD39TAIWAN SEMICONDUCTOR MFG5ELITE SEMICONDUCTOR ESMT2HUANG CHIA-EN1YANG JUNG-PING1
Top patents by PatentIndex Score
48 records- 0198US9117510B2Circuit for memory write data operationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 25, 2015·69 cites·20 claims
- 0293US10951200B2Clock circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 16, 2021·3 cites·20 claims
- 0393US9449663B2Circuit for memory write data operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·14 cites·20 claims
- 0492US11323101B2Clock circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 3, 2022·2 cites·20 claims
- 0592US10340897B2Clock generating circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 2, 2019·6 cites·20 claims
- 0691US10503421B2Configurable memory storage systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·6 cites·20 claims
- 0790US11301148B2Configurable memory storage systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 12, 2022·2 cites·20 claims
- 0889US10574213B2Clock circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 25, 2020·3 cites·20 claims
- 0989US2025322873A1Non-volatile static random access memory (nvsram) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1088US7359248B2Methods for programming and reading NAND flash memory device and page buffer performing the sameELITE SEMICONDUCTOR ESMT·Filed 2006·Granted Apr 15, 2008·23 cites·18 claims
- 1184US9449656B2Memory with bit cell header transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 20, 2016·9 cites·20 claims
- 1283US10304500B2Power switch control for dual power supplyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·4 cites·23 claims
- 1382US12380950B2Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 1480US12243618B2Method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 1580US12230359B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 1678US11984164B2Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
- 1778US2025166681A1Three-dimensional (3-d) write assist scheme for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1877US12183428B2Memory circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 1977US9083342B2Circuit and method for power managementTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 14, 2015·4 cites·19 claims
- 2076US11677387B2Clock circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 13, 2023·0 cites·20 claims
- 2176US10949100B2Configurable memory storage systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·2 cites·20 claims
- 2276US2025157512A1Memory circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2376US2025149073A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2474US12237050B2Three-dimensional (3-D) write assist scheme for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·19 claims
- 2573US11715505B2Memory circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 1, 2023·0 cites·20 claims
- 2673US9104214B2Voltage providing circuitTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 11, 2015·3 cites·21 claims
- 2772US11675505B2Configurable memory storage systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 13, 2023·0 cites·20 claims
- 2872US11657873B2Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·0 cites·20 claims
- 2968US11417377B2Three-dimensional (3-D) write assist scheme for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
- 3067US8659090B2Resistive memory and methods for forming the sameHUANG CHIA-EN·Filed 2011·Granted Feb 25, 2014·3 cites·20 claims
- 3165US11600626B2Semiconductor device including anti-fuse cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 7, 2023·0 cites·20 claims
- 3265US9934828B2Shared sense amplifier and write driverTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 3, 2018·2 cites·20 claims
- 3362US9275181B2Cell designTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 1, 2016·1 cites·20 claims
- 3461US10685686B2Power switch control for dual power supplyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 16, 2020·0 cites·20 claims
- 3561US9905291B2Circuit and method of generating a sense amplifier enable signalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 27, 2018·1 cites·20 claims
- 3660US10510380B2Power switch control for dual power supplyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·0 cites·20 claims
- 3757US11107530B2Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·15 claims
- 3856US9564193B2Circuit to generate a sense amplifier enable signalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 7, 2017·1 cites·20 claims
- 3954US9218262B2Dynamic memory cell replacement using column redundancyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 22, 2015·1 cites·18 claims
- 4053US11468929B2Memory circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 11, 2022·0 cites·20 claims
- 4153US10777244B2Three-dimensional (3-D) write assist scheme for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 15, 2020·0 cites·20 claims
- 4248US10176855B2Three-dimensional (3-D) write assist scheme for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 8, 2019·0 cites·19 claims
- 4347US10001801B2Voltage providing circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 19, 2018·0 cites·20 claims
- 4443US9164522B2Wake up bias circuit and method of using the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 20, 2015·0 cites·20 claims
- 4540US10276232B2Read margin tracking in memory applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·0 cites·20 claims
- 4639US7894220B2Voltage generating circuitELITE SEMICONDUCTOR ESMT·Filed 2008·Granted Feb 22, 2011·0 cites·17 claims
- 4738US8976611B2Asymmetric sensing amplifier, memory device and designing methodYANG JUNG-PING·Filed 2013·Granted Mar 10, 2015·0 cites·20 claims
- 4837US9934845B2Latch with built-in level shifterTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 3, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →