Inventor · disambiguated record

Fu-Kai Yang

Also filed as: YANG FU-KAI

144 granted patents·56 pending applications·284 citations·filing 2004–2025

99Inventor score

Technology areasH10P H10W H10D B64U H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD187 GEOSAT AEROSPACE & TECH6 TAIWAN SEMICONDUCTOR MFG6 YU JANET1

Top patents by PatentIndex Score

200 records

0198US12068200B2Backside via with a low-k spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·5 cites·20 claims
0298US11615987B2Backside via with a low-k spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·6 cites·20 claims
0397US11961886B2Semiconductor structure with conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·3 cites·20 claims
0497US11527614B2Semiconductor structure with conductive structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·4 cites·20 claims
0597US11362003B2Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·4 cites·20 claims
0697US11302802B2Parasitic capacitance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·4 cites·20 claims
0797US11276643B2Semiconductor device with backside spacer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 15, 2022·5 cites·20 claims
0897US10177038B1Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 8, 2019·17 cites·20 claims
0997US9685439B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 20, 2017·16 cites·20 claims
1097US9647116B1Method for fabricating self-aligned contact in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·19 cites·20 claims
1196US12068378B2Semiconductor devices with backside via and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·2 cites·20 claims
1296US11855169B2Silicide structures in transistors and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
1396US11784222B2Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·2 cites·20 claims
1496US11450572B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·3 cites·20 claims
1596US10121675B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 6, 2018·10 cites·20 claims
1695US11935932B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·2 cites·20 claims
1795US11876135B2Epitaxial source/drain structures for multigate devices and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 16, 2024·2 cites·20 claims
1895US11244832B2Semiconductor structure with mask structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·3 cites·20 claims
1995US10504990B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·9 cites·20 claims
2094US12464806B2Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·1 cites·20 claims
2194US11791387B2Semiconductor devices with backside via and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
2294US11107902B2Dielectric spacer to prevent contacting shortingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 31, 2021·8 cites·20 claims
2394US10825737B2Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·7 cites·20 claims
2493US11728394B2Method of forming backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
2593US10867870B1Semiconductor device with funnel shape spacer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·5 cites·20 claims
2693US10490459B2Method for source/drain contact formation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 26, 2019·6 cites·20 claims
2792US11569364B2Silicide backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·2 cites·20 claims
2892US11387331B2Source/drain contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·3 cites·19 claims
2992US10943818B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·6 cites·20 claims
3092US10930564B2Metal gate structure cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·7 cites·20 claims
3192US2025357210A1Methods For Reducing Contact Depth Variation In Semiconductor FabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3291US11532504B2Low-resistance contact plugs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
3391US9437495B2Mask-less dual silicide processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 6, 2016·13 cites·20 claims
3490US11289383B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
3590US2025359213A1Semiconductor transistor structure with nanostructures and conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3689US12266703B2Dielectric structures for semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 1, 2025·1 cites·20 claims
3789US11037924B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 15, 2021·4 cites·20 claims
3888US12009363B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 11, 2024·1 cites·20 claims
3988US10475788B2Fin field effect transistor (FinFET) device structure with capping layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·4 cites·20 claims
4087USD866394SUnmanned aerial vehicleGEOSAT AEROSPACE & TECH·Filed 2018·Granted Nov 12, 2019·36 cites·1 claims
4187US9331173B2Semiconductor device having a carbon containing insulation layer formed under the source/drainTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 3, 2016·5 cites·20 claims
4287US2025359137A1Disposable Hard Mask for Interconnect FormationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4386US11728397B2Integrated circuits having protruding interconnect conductorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·1 cites·20 claims
4486US2024363429A1Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4585US12389646B2Semiconductor transistor structure with nanostructures and conductive structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
4685US11342444B2Dielectric spacer to prevent contacting shortingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 24, 2022·2 cites·20 claims
4785US10535555B2Contact plugs and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·3 cites·20 claims
4885US2025349546A1Contact resistance reduction for transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4984US12224330B2Silicide structures in transistors and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
5084US12125879B2Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →