Inventor · disambiguated record
Fu-Wei Yao
Also filed as: Yao fu-wei
76 granted patents·2 pending applications·209 citations·filing 2011–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD54TAIWAN SEMICONDUCTOR MFG10WONG KING-YUEN4Yao fu-wei3CHEN PO-CHIH2
Top patents by PatentIndex Score
78 records- 0197US11854909B2Semiconductor structure and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0297US11404557B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 0397US9379191B2High electron mobility transistor including an isolation regionHSU CHUN-WEI·Filed 2011·Granted Jun 28, 2016·27 cites·20 claims
- 0496US11824109B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 21, 2023·2 cites·20 claims
- 0595US9425301B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·14 cites·17 claims
- 0694US11522066B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·2 cites·20 claims
- 0794US10411681B2Semiconductor device and circuit protecting methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 10, 2019·11 cites·20 claims
- 0894US10050117B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·6 cites·20 claims
- 0993US10522647B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·5 cites·20 claims
- 1093US9882553B2Semiconductor device and circuit protecting methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 30, 2018·11 cites·20 claims
- 1193US9111905B2High electron mobility transistor and method of forming the sameYao fu-wei·Filed 2012·Granted Aug 18, 2015·12 cites·20 claims
- 1293US8624296B1High electron mobility transistor including an embedded flourine regionWONG KING-YUEN·Filed 2012·Granted Jan 7, 2014·18 cites·18 claims
- 1391US9443969B2Transistor having metal diffusion barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 13, 2016·10 cites·20 claims
- 1490US10790375B2High electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·3 cites·20 claims
- 1590US8507920B2Semiconductor structure and method of forming the sameCHEN PO-CHIH·Filed 2011·Granted Aug 13, 2013·12 cites·20 claims
- 1689US8680535B2High electron mobility transistor structure with improved breakdown voltage performanceYao fu-wei·Filed 2012·Granted Mar 25, 2014·7 cites·20 claims
- 1788US10319644B2Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 11, 2019·3 cites·20 claims
- 1888US9704968B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·3 cites·17 claims
- 1988US9165839B2Plasma protection diode for a HEMT deviceWONG KING-YUEN·Filed 2012·Granted Oct 20, 2015·6 cites·20 claims
- 2087US12230690B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 2187US10741665B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·2 cites·20 claims
- 2287US9508807B2Method of forming high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·3 cites·20 claims
- 2386US9627275B1Hybrid semiconductor structure on a common substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·3 cites·19 claims
- 2486US9147743B2High electron mobility transistor structure with improved breakdown voltage performanceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 29, 2015·4 cites·20 claims
- 2585US11522077B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·1 cites·20 claims
- 2685US8697505B2Method of forming a semiconductor structureCHEN PO-CHIH·Filed 2011·Granted Apr 15, 2014·6 cites·20 claims
- 2783US9685525B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 20, 2017·2 cites·20 claims
- 2882US8963162B2High electron mobility transistorHSU CHUN-WEI·Filed 2011·Granted Feb 24, 2015·5 cites·20 claims
- 2981US12272741B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 3081US2025240996A1Integration of p-channel and n-channel e-fet iii-v devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3180US10868136B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·20 claims
- 3280US2023299133A1Isolation structure for active devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3379US11804538B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 3479US8946771B2Gallium nitride semiconductor devices and method making thereofHSIUNG CHIH-WEN·Filed 2011·Granted Feb 3, 2015·7 cites·17 claims
- 3579US8841703B2High electron mobility transistor and method of forming the sameWONG KING-YUEN·Filed 2011·Granted Sep 23, 2014·4 cites·20 claims
- 3674US10276657B2Isolation structure for active devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·1 cites·20 claims
- 3773US11705486B2Isolation structure for active devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 18, 2023·0 cites·20 claims
- 3873US9419093B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 16, 2016·2 cites·20 claims
- 3973US9184259B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 10, 2015·2 cites·20 claims
- 4072US8921893B2Circuit structure having islands between source and drainYU CHEN-JU·Filed 2011·Granted Dec 30, 2014·2 cites·19 claims
- 4171US9583588B2Method of making high electron mobility transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·1 cites·20 claims
- 4270US9553182B2Circuit structure, transistor and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·1 cites·20 claims
- 4369US11843047B2Integration of p-channel and n-channel E-FET III-V devices without parasitic channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·0 cites·20 claims
- 4468US9111956B2Rectifier structures with low leakageTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 18, 2015·1 cites·20 claims
- 4567US9224829B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·1 cites·20 claims
- 4666US11430702B2Semiconductor structure and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·0 cites·20 claims
- 4766US10522630B2High electron mobility transistor structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·0 cites·20 claims
- 4865US10854711B2Isolation structure for active devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·0 cites·20 claims
- 4964US10868135B2High electron mobility transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 5064US10276682B2High electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·0 cites·20 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →