Inventor · disambiguated record
Gary Liu
Also filed as: LIU GARY · LIU GARY HSU WEI
2 granted patents·7 pending applications·0 citations·filing 2022–2025
30Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD9
Top patents by PatentIndex Score
9 records- 0186US2025357195A1Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0283US12431386B2Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 0371US12062572B2Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 0457US2025132247A1Interconnection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0557US2025118598A1Interconnection structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0657US2025149436A1Interconnect structure with low rc delay and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0757US2025096140A1Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0855US2025167042A1Semiconductor device having low dielectric capacitance, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0953US2024234203A1Semiconductor device having low dielectric capacitance and good electrical breakdown performance, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →