Inventor · disambiguated record
Gangadhara S. Mathad
Also filed as: MATHAD GANGADHARA S · MATHAD GANGADHARA SWAMI
25 granted patents·1,963 citations·filing 1983–2004
97Inventor score
Top patents by PatentIndex Score
25 records- 0199US6224690B1Flip-Chip interconnections using lead-free soldersIBM·Filed 1996·Granted May 1, 2001·191 cites·12 claims
- 0299US5391510AFormation of self-aligned metal gate FETs using a benignant removable gate material during high temperature stepsIBM·Filed 1994·Granted Feb 21, 1995·394 cites·3 claims
- 0396US4602981AMonitoring technique for plasma etchingIBM·Filed 1985·Granted Jul 29, 1986·76 cites·5 claims
- 0496US4534816ASingle wafer plasma etch reactorIBM·Filed 1984·Granted Aug 13, 1985·458 cites·14 claims
- 0593US6284666B1Method of reducing RIE lag for deep trench silicon etchingIBM·Filed 2000·Granted Sep 4, 2001·87 cites·13 claims
- 0693US4617730AMethod of fabricating a chip interposerIBM·Filed 1984·Granted Oct 21, 1986·118 cites·29 claims
- 0793US4490211ALaser induced chemical etching of metals with excimer lasersIBM·Filed 1984·Granted Dec 25, 1984·73 cites·10 claims
- 0893US4478677ALaser induced dry etching of vias in glass with non-contact maskingIBM·Filed 1983·Granted Oct 23, 1984·73 cites·21 claims
- 0990US6809005B2Method to fill deep trench structures with void-free polysilicon or siliconINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 26, 2004·51 cites·32 claims
- 1089US4671849AMethod for control of etch profileIBM·Filed 1985·Granted Jun 9, 1987·93 cites·3 claims
- 1187US6743727B2Method of etching high aspect ratio openingsIBM·Filed 2001·Granted Jun 1, 2004·38 cites·20 claims
- 1286US6544838B2Method of deep trench formation with improved profile control and surface areaINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 8, 2003·36 cites·30 claims
- 1386US6489249B1Elimination/reduction of black silicon in DT etchINFINEON TECHNOLOGIES AG·Filed 2000·Granted Dec 3, 2002·37 cites·12 claims
- 1486US4490210ALaser induced dry chemical etching of metalsIBM·Filed 1984·Granted Dec 25, 1984·38 cites·23 claims
- 1584US4741799AAnisotropic silicon etching in fluorinated plasmaIBM·Filed 1986·Granted May 3, 1988·65 cites·7 claims
- 1681US4511430AControl of etch rate ratio of SiO2 /photoresist for quartz planarization etch back processIBM·Filed 1984·Granted Apr 16, 1985·45 cites·6 claims
- 1772US6821900B2Method for dry etching deep trenches in a substrateINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 23, 2004·15 cites·30 claims
- 1863US6709917B2Method to increase the etch rate and depth in high aspect ratio structureIBM·Filed 2002·Granted Mar 23, 2004·8 cites·18 claims
- 1958US6687014B2Method for monitoring the rate of etching of a semiconductorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 3, 2004·8 cites·32 claims
- 2057US5759437AEtching of Ti-W for C4 reworkIBM·Filed 1996·Granted Jun 2, 1998·20 cites·17 claims
- 2156US7144769B2Method to achieve increased trench depth, independent of CD as defined by lithographyIBM·Filed 2004·Granted Dec 5, 2006·4 cites·5 claims
- 2249US5024896ACollimated metal depositionIBM·Filed 1989·Granted Jun 18, 1991·16 cites·19 claims
- 2347US6821864B2Method to achieve increased trench depth, independent of CD as defined by lithographyIBM·Filed 2002·Granted Nov 23, 2004·1 cites·8 claims
- 2447US5258264AProcess of forming a dual overhang collimated lift-off stencil with subsequent metal depositionIBM·Filed 1992·Granted Nov 2, 1993·18 cites·14 claims
- 2540US6842235B2Optical measurement of planarized featuresINFINEON TECHNOLOGIES CORP·Filed 2001·Granted Jan 11, 2005·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →