Inventor · disambiguated record
Gaurab Samanta
Also filed as: SAMANTA GAURAB
19 granted patents·4 pending applications·30 citations·filing 2014–2024
92Inventor score
Files withGLOBALWAFERS CO LTD16SUNEDISON SEMICONDUCTOR LTD UEN201334164H4CORNER STAR LTD1SUNEDISON SEMICONDUCTOR LTD1VEECO INSTRUMENTS INC1
Top patents by PatentIndex Score
23 records- 0197US11668020B2Systems and methods for production of low oxygen content siliconGLOBALWAFERS CO LTD·Filed 2021·Granted Jun 6, 2023·3 cites·16 claims
- 0297US11136691B2Systems and methods for production of low oxygen content siliconGLOBALWAFERS CO LTD·Filed 2020·Granted Oct 5, 2021·5 cites·5 claims
- 0396US12037699B2Systems for production of low oxygen content siliconGLOBALWAFERS CO LTD·Filed 2023·Granted Jul 16, 2024·2 cites·17 claims
- 0496US10745823B2Systems and methods for production of low oxygen content siliconGLOBALWAFERS CO LTD·Filed 2016·Granted Aug 18, 2020·6 cites·14 claims
- 0591US10487418B2Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth processSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2017·Granted Nov 26, 2019·3 cites·19 claims
- 0690US12247314B2Systems for production of low oxygen content siliconGLOBALWAFERS CO LTD·Filed 2024·Granted Mar 11, 2025·0 cites·17 claims
- 0789US10066314B2Crystal growing systems and methods including a transparent crucibleSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted Sep 4, 2018·2 cites·18 claims
- 0888US9951440B2Methods for producing low oxygen silicon ingotsSUNEDISON SEMICONDUCTOR LTD·Filed 2014·Granted Apr 24, 2018·3 cites·35 claims
- 0985US10513796B2Methods for producing low oxygen silicon ingotsGLOBALWAFERS CO LTD·Filed 2018·Granted Dec 24, 2019·1 cites·31 claims
- 1083US2025125188A1Method for transfer of a thin layer of siliconGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 1182US11313049B2Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defectsGLOBALWAFERS CO LTD·Filed 2016·Granted Apr 26, 2022·1 cites·11 claims
- 1280US12398487B2Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and sizeGLOBALWAFERS CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·15 claims
- 1380US10818540B2Method for transfer of a thin layer of siliconGLOBALWAFERS CO LTD·Filed 2019·Granted Oct 27, 2020·2 cites·31 claims
- 1477US11111602B2Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and sizeSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Sep 7, 2021·2 cites·9 claims
- 1575US12183625B2Method for transfer of a thin layer of siliconGLOBALWAFERS CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·34 claims
- 1673US2021340691A1Crystal pulling system and methods for producing monocrystalline ingots with reduced edge band defectsGLOBALWAFERS CO LTD·Filed 2021·Application pending·0 cites
- 1771US10557213B2Crystal growing systems and methods including a transparent crucibleGLOBALWAFERS CO LTD·Filed 2018·Granted Feb 11, 2020·0 cites·7 claims
- 1870US11753741B2Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and sizeGLOBALWAFERS CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·10 claims
- 1969US11443978B2Method for transfer of a thin layer of siliconGLOBALWAFERS CO LTD·Filed 2020·Granted Sep 13, 2022·0 cites·36 claims
- 2057US10988859B2Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and sizeSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Apr 27, 2021·0 cites·8 claims
- 2154US11072870B2Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defectsGLOBALWAFERS CO LTD·Filed 2018·Granted Jul 27, 2021·0 cites·19 claims
- 2243US2020248307A1Rotating Disk Reactor with Self-Locking Carrier-to-Support Interface for Chemical Vapor DepositionVEECO INSTRUMENTS INC·Filed 2020·Application pending·0 cites
- 2341US2018291524A1Methods for producing single crystal ingots doped with volatile dopantsCORNER STAR LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →