Inventor · disambiguated record
Gerben Doornbos
Also filed as: DOORNBOS GERBEN
152 granted patents·63 pending applications·450 citations·filing 2005–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD187NXP BV7TAIWAN SEMICONDUCTOR MFG7DOORNBOS GERBEN4BHUWALKA KRISHNA KUMAR2
Top patents by PatentIndex Score
215 records- 0198US11742292B2Integrated chip having a buried power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·4 cites·20 claims
- 0298US11728244B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·4 cites·20 claims
- 0398US10950546B1Semiconductor device including back side power supply circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·26 cites·20 claims
- 0497US11659721B2Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·3 cites·20 claims
- 0597US11637067B2Semiconductor device including back side power supply circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·3 cites·20 claims
- 0697US11004789B2Semiconductor device including back side power supply circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·14 cites·20 claims
- 0797US8766364B2Fin field effect transistor layout for stress optimizationDOORNBOS GERBEN·Filed 2012·Granted Jul 1, 2014·42 cites·20 claims
- 0896US11653507B2Gate all around semiconductor structure with diffusion breakTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 16, 2023·2 cites·20 claims
- 0996US10756174B2Multiple-stacked semiconductor nanowires and source/drain spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 25, 2020·11 cites·18 claims
- 1096US10453752B2Method of manufacturing a gate-all-around semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 22, 2019·9 cites·17 claims
- 1195US11024548B2Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 1, 2021·6 cites·20 claims
- 1295US10971684B2Intercalated metal/dielectric structure for nonvolatile memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·4 cites·20 claims
- 1395US8471329B2Tunnel FET and methods for forming the sameBHUWALKA KRISHNA KUMAR·Filed 2011·Granted Jun 25, 2013·25 cites·20 claims
- 1494US11990514B2Protrusion field-effect transistor and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 21, 2024·2 cites·20 claims
- 1594US11791420B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
- 1694US10629501B2Gate all-around semiconductor device including a first nanowire structure and a second nanowire structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·9 cites·18 claims
- 1794US10276719B1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·7 cites·20 claims
- 1894US8604518B2Split-channel transistor and methods for forming the sameBHUWALKA KRISHNA KUMAR·Filed 2011·Granted Dec 10, 2013·18 cites·14 claims
- 1993US11956940B2Vertical heterostructure semiconductor memory cell and methods for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 9, 2024·1 cites·20 claims
- 2093US11482609B2Ferroelectric channel field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 25, 2022·2 cites·20 claims
- 2193US11069813B2Localized heating in laser annealing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·6 cites·20 claims
- 2293US10770358B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 8, 2020·5 cites·20 claims
- 2393US10170378B2Gate all-around semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·8 cites·20 claims
- 2493US9761666B2Strained channel field effect transistorVAN DAL MARK·Filed 2011·Granted Sep 12, 2017·10 cites·7 claims
- 2592US11784234B2Ferroelectric channel field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·1 cites·20 claims
- 2692US11569352B2Protrusion field-effect transistor and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·2 cites·20 claims
- 2792US11088337B2Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·6 cites·20 claims
- 2892US9337109B2Multi-threshold voltage FETsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 10, 2016·14 cites·20 claims
- 2992US8823102B2Device with a strained FinTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 2, 2014·14 cites·20 claims
- 3091US11450748B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
- 3191US11387362B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 12, 2022·6 cites·20 claims
- 3290US12206024B2Transistors including crystalline raised active regions and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·1 cites·20 claims
- 3390US11430512B2Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 30, 2022·2 cites·20 claims
- 3490US11276832B2Semiconductor structure with diffusion break and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·4 cites·20 claims
- 3590US10332970B2Method for manufacturing horizontal-gate-all-around devices with different number of nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 25, 2019·6 cites·4 claims
- 3690US9472468B2Nanowire CMOS structure and formation methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 18, 2016·10 cites·20 claims
- 3790US9412871B2FinFET with channel backside passivation layer device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·11 cites·15 claims
- 3889US11728222B2Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·1 cites·20 claims
- 3989US10535780B2Semiconductor device including an epitaxial layer wrapping around the nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·5 cites·20 claims
- 4089US8148052B2Double patterning for lithography to increase feature spatial densityVANLEENHOVE ANJA MONIQUE·Filed 2007·Granted Apr 3, 2012·39 cites·17 claims
- 4189US7919364B2Semiconductor devices and methods of manufacture thereofNXP BV·Filed 2007·Granted Apr 5, 2011·16 cites·10 claims
- 4288US11587786B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·1 cites·20 claims
- 4388US11165032B2Field effect transistor using carbon nanotubesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·2 cites·20 claims
- 4487US8779527B2FinFET drive strength modificationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 15, 2014·7 cites·20 claims
- 4587US2025359182A1Access transistor including a metal oxide barrier layer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4686US12137621B2Intercalated metal/dielectric structure for nonvolatile memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
- 4786US11869975B2Thin-film transistors and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 9, 2024·1 cites·20 claims
- 4886US11672110B2Heterostructure oxide semiconductor vertical gate-all-around (VGAA) transistor and methods for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·1 cites·20 claims
- 4986US2024381795A1Intercalated metal/dielectric structure for nonvolatile memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5085US12300550B2Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
Showing the top 50 of 215 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →