Inventor · disambiguated record
Georges Falessi
Also filed as: FALESSI GEORGES
9 granted patents·512 citations·filing 1990–1995
92Inventor score
Files withTEXAS INSTRUMENTS INC9
Top patents by PatentIndex Score
9 records- 0191US5296393AProcess for the simultaneous fabrication of high-and-low-voltage semiconductor devices, integrated circuit containing the same, systems and methodsTEXAS INSTRUMENTS INC·Filed 1992·Granted Mar 22, 1994·110 cites·3 claims
- 0289US5557569ALow voltage flash EEPROM C-cell using fowler-nordheim tunnelingTEXAS INSTRUMENTS INC·Filed 1995·Granted Sep 17, 1996·90 cites·6 claims
- 0388US5504706ALow voltage Fowler-Nordheim flash EEPROM memory array utilizing single level poly cellsTEXAS INSTRUMENTS INC·Filed 1993·Granted Apr 2, 1996·82 cites·2 claims
- 0486US5515319ANon-volatile memory cell and level shifterTEXAS INSTRUMENTS INC·Filed 1993·Granted May 7, 1996·67 cites·17 claims
- 0576US5319564AMethod and apparatus for integrated circuit designTEXAS INSTRUMENTS INC·Filed 1993·Granted Jun 7, 1994·62 cites·25 claims
- 0669US5245543AMethod and apparatus for integrated circuit designTEXAS INSTRUMENTS INC·Filed 1990·Granted Sep 14, 1993·47 cites·26 claims
- 0768US5432740ALow voltage flash EEPROM memory cell with merge select transistor and non-stacked gate structureTEXAS INSTRUMENTS INC·Filed 1993·Granted Jul 11, 1995·28 cites·9 claims
- 0853US5491105ALDMOS transistor with self-aligned source/backgate and photo-aligned gateTEXAS INSTRUMENTS INC·Filed 1994·Granted Feb 13, 1996·11 cites·9 claims
- 0952US5467307AMemory array utilizing low voltage Fowler-Nordheim Flash EEPROM cellTEXAS INSTRUMENTS INC·Filed 1993·Granted Nov 14, 1995·15 cites·3 claims
Join the waitlist — get patent alerts
Get an alert when Georges Falessi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →