Inventor · disambiguated record
Genshu Fuse
Also filed as: FUSE GENSHU
17 granted patents·724 citations·filing 1983–2011
95Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD12MATSUSHITA ELECTRONICS CORP2AGENCY IND SCIENCE TECHN1FUSE GENSHU1SUGITANI MICHIRO1
Top patents by PatentIndex Score
17 records- 0197US4487635AMethod of fabricating a multi-layer type semiconductor device including crystal growth by spirally directing energy beamAGENCY IND SCIENCE TECHN·Filed 1983·Granted Dec 11, 1984·289 cites·10 claims
- 0280US5223445ALarge angle ion implantation methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Jun 29, 1993·73 cites·10 claims
- 0378US4861729AMethod of doping impurities into sidewall of trench by use of plasma sourceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1987·Granted Aug 29, 1989·51 cites·6 claims
- 0476US5026658AMethod of making a trench capacitor dram cellMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Jun 25, 1991·30 cites·6 claims
- 0574US5270226AManufacturing method for LDDFETS using oblique ion implantion techniqueMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Dec 14, 1993·42 cites·13 claims
- 0673US5466612AMethod of manufacturing a solid-state image pickup deviceMATSUSHITA ELECTRONICS CORP·Filed 1993·Granted Nov 14, 1995·49 cites·2 claims
- 0771US9023720B2Manufacturing method of semiconductor deviceFUSE GENSHU·Filed 2011·Granted May 5, 2015·4 cites·16 claims
- 0866US4920390ASemiconductor memory device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1988·Granted Apr 24, 1990·21 cites·13 claims
- 0966US4918027AMethod of fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1988·Granted Apr 17, 1990·30 cites·1 claims
- 1062US8163635B2Manufacturing method of semiconductor deviceSUGITANI MICHIRO·Filed 2010·Granted Apr 24, 2012·2 cites·14 claims
- 1162US5270227AMethod for fabrication of semiconductor device utilizing ion implantation to eliminate defectsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Dec 14, 1993·34 cites·7 claims
- 1260US5476006ACrystal evaluation apparatus and crystal evaluation methodMATSUSHITA ELECTRONICS CORP·Filed 1993·Granted Dec 19, 1995·24 cites·16 claims
- 1359US5013673AImplantation method for uniform trench sidewall doping by scanning velocity correctionMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted May 7, 1991·30 cites·9 claims
- 1446US5049518AMethod of making a trench dram cellMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Sep 17, 1991·13 cites·3 claims
- 1545US5057444AMethod of fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted Oct 15, 1991·18 cites·3 claims
- 1640US4764483AMethod for burying a step in a semiconductor substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1987·Granted Aug 16, 1988·10 cites·8 claims
- 1730USRE37228EMethod of fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Jun 12, 2001·4 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →