Inventor · disambiguated record
George Matamis
Also filed as: MATAMIS GEORGE
112 granted patents·7 pending applications·2,294 citations·filing 2003–2024
99Inventor score
Files withSANDISK TECHNOLOGIES INC46SANDISK CORP25MICRON TECHNOLOGY INC12PURAYATH VINOD ROBERT8SANDISK 3D LLC6
Top patents by PatentIndex Score
119 records- 0199US9627399B2Three-dimensional memory device with metal and silicide control gatesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 18, 2017·41 cites·25 claims
- 0299US9230974B1Methods of selective removal of blocking dielectric in NAND memory stringsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·56 cites·39 claims
- 0399US8187936B2Ultrahigh density vertical NAND memory device and method of making thereofALSMEIER JOHANN·Filed 2010·Granted May 29, 2012·304 cites·18 claims
- 0498US9780182B2Molybdenum-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 3, 2017·32 cites·16 claims
- 0598US9698223B2Memory device containing stress-tunable control gate electrodesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jul 4, 2017·26 cites·27 claims
- 0698US9679906B2Three-dimensional memory devices containing memory block bridgesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 13, 2017·35 cites·18 claims
- 0798US9543318B1Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistorsSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 10, 2017·80 cites·18 claims
- 0898US9478558B2Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 25, 2016·43 cites·34 claims
- 0998US9397046B1Fluorine-free word lines for three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 19, 2016·63 cites·23 claims
- 1098US9356031B2Three dimensional NAND string memory devices with voids enclosed between control gate electrodesSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 31, 2016·61 cites·4 claims
- 1198US9252151B2Three dimensional NAND device with birds beak containing floating gates and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 2, 2016·60 cites·33 claims
- 1298US9236396B1Three dimensional NAND device and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 12, 2016·46 cites·11 claims
- 1398US9230983B1Metal word lines for three dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·43 cites·20 claims
- 1498US9159739B2Floating gate ultrahigh density vertical NAND flash memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 13, 2015·70 cites·27 claims
- 1598US8928061B2Three dimensional NAND device with silicide containing floating gatesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 6, 2015·72 cites·11 claims
- 1698US8461641B2Ultrahigh density vertical NAND memory device and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2012·Granted Jun 11, 2013·42 cites·15 claims
- 1798US8330208B2Ultrahigh density monolithic three dimensional vertical NAND string memory device and method of making thereofALSMEIER JOHANN·Filed 2012·Granted Dec 11, 2012·46 cites·14 claims
- 1897US9837286B2Systems and methods for selectively etching tungsten in a downstream reactorLAM RES CORP·Filed 2016·Granted Dec 5, 2017·104 cites·20 claims
- 1997US9691884B2Monolithic three dimensional NAND strings and methods of fabrication thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 27, 2017·41 cites·42 claims
- 2097US9305849B1Method of making a three dimensional NAND deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·47 cites·11 claims
- 2197US9165940B2Three dimensional NAND device with silicide containing floating gates and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 20, 2015·36 cites·20 claims
- 2297US8383479B2Integrated nanostructure-based non-volatile memory fabricationSANDISK TECHNOLOGIES INC·Filed 2010·Granted Feb 26, 2013·33 cites·47 claims
- 2396US9806090B2Vertical floating gate NAND with selectively deposited ALD metal filmsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 31, 2017·18 cites·11 claims
- 2496US9570460B2Spacer passivation for high-aspect ratio opening film removal and cleaningSANDISK TECHNOLOGIES INC·Filed 2015·Granted Feb 14, 2017·15 cites·21 claims
- 2596US9530785B1Three-dimensional memory devices having a single layer channel and methods of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·24 cites·25 claims
- 2696US9496419B2Ruthenium nucleation layer for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 15, 2016·30 cites·30 claims
- 2796US9379124B2Vertical floating gate NAND with selectively deposited ALD metal filmsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 28, 2016·24 cites·19 claims
- 2896US9305932B2Methods of making three dimensional NAND devicesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·23 cites·24 claims
- 2996US8603890B2Air gap isolation in non-volatile memoryPURAYATH VINOD ROBERT·Filed 2011·Granted Dec 10, 2013·26 cites·24 claims
- 3096US7871909B1Methods of using single spacer to triple line/space frequencySANDISK 3D LLC·Filed 2010·Granted Jan 18, 2011·30 cites·20 claims
- 3195US10170324B2Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etchLAM RES CORP·Filed 2017·Granted Jan 1, 2019·13 cites·23 claims
- 3295US10128261B2Cobalt-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Nov 13, 2018·14 cites·25 claims
- 3395US9524977B2Metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 20, 2016·15 cites·22 claims
- 3495US9524779B2Three dimensional vertical NAND device with floating gatesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 20, 2016·21 cites·20 claims
- 3595US9515079B2Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attackSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 6, 2016·13 cites·13 claims
- 3695US9484357B2Selective blocking dielectric formation in a three-dimensional memory structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 1, 2016·28 cites·24 claims
- 3795US8778749B2Air isolation in high density non-volatile memoryPACHAMUTHU JAYAVEL·Filed 2012·Granted Jul 15, 2014·27 cites·20 claims
- 3895US8492224B2Metal control gate structures and air gap isolation in non-volatile memoryPURAYATH VINOD ROBERT·Filed 2011·Granted Jul 23, 2013·19 cites·15 claims
- 3995US7494870B2Methods of forming NAND memory with virtual channelSANDISK CORP·Filed 2007·Granted Feb 24, 2009·27 cites·19 claims
- 4094US8823075B2Select gate formation for nanodot flat cellSANDISK TECHNOLOGIES INC·Filed 2012·Granted Sep 2, 2014·21 cites·7 claims
- 4194US7795080B2Methods of forming integrated circuit devices using composite spacer structuresSANDISK CORP·Filed 2008·Granted Sep 14, 2010·37 cites·8 claims
- 4294US7723186B2Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layerSANDISK CORP·Filed 2007·Granted May 25, 2010·26 cites·19 claims
- 4393US9570455B2Metal word lines for three dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 14, 2017·14 cites·24 claims
- 4493US8987087B2Three dimensional NAND device with birds beak containing floating gates and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Mar 24, 2015·14 cites·9 claims
- 4593US8969153B2NAND string containing self-aligned control gate sidewall claddingSANDISK TECHNOLOGIES INC·Filed 2013·Granted Mar 3, 2015·14 cites·8 claims
- 4693US7582529B2Methods of fabricating non-volatile memory with integrated peripheral circuitry and pre-isolation memory cell formationSANDISK CORP·Filed 2008·Granted Sep 1, 2009·19 cites·2 claims
- 4792US9698149B2Non-volatile memory with flat cell structures and air gap isolationSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 4, 2017·9 cites·20 claims
- 4892US9397107B2Methods of making three dimensional NAND devicesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jul 19, 2016·12 cites·17 claims
- 4992US8097498B2Damascene method of making a nonvolatile memory devicePURAYATH VINOD ROBERT·Filed 2010·Granted Jan 17, 2012·16 cites·13 claims
- 5092US7732275B2Methods of forming NAND flash memory with fixed chargeSANDISK CORP·Filed 2007·Granted Jun 8, 2010·17 cites·18 claims
Showing the top 50 of 119 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →