Inventor · disambiguated record
Gerhard Miller
Also filed as: MILLER GERHARD
10 granted patents·1 pending application·231 citations·filing 1988–2017
90Inventor score
Top patents by PatentIndex Score
11 records- 0190US6309920B1Bipolar transistor which can be controlled by field effect and method for producing the sameSIEMENS AG·Filed 1998·Granted Oct 30, 2001·103 cites·5 claims
- 0276US4893165ABipolar transistor controllable by field effectSIEMENS AG·Filed 1989·Granted Jan 9, 1990·32 cites·11 claims
- 0373US10325996B2Method for producing a doped semiconductor layerINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 18, 2019·1 cites·17 claims
- 0470US7233031B2Vertical power semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jun 19, 2007·15 cites·14 claims
- 0566US9362349B2Semiconductor device with charge carrier lifetime reduction meansINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jun 7, 2016·2 cites·31 claims
- 0660US5726474AField effect controlled semiconductor component with integrated resistance thereinSIEMENS AG·Filed 1996·Granted Mar 10, 1998·26 cites·7 claims
- 0756US4816984ABridge arm with transistors and recovery diodesSIEMENS AG·Filed 1988·Granted Mar 28, 1989·22 cites·18 claims
- 0852US5753971APower semiconductor module with terminal pinsSIEMENS AG·Filed 1996·Granted May 19, 1998·20 cites·20 claims
- 0949US2014001514A1Semiconductor Device and Method for Producing a Doped Semiconductor LayerSCHULZE HANS-JOACHIM·Filed 2012·Application pending·0 cites
- 1045US7023086B2Semiconductor component arrangement with a reduced oscillation tendencyINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 4, 2006·3 cites·17 claims
- 1131US4951110APower semiconductor structural element with four layersSIEMENS AG·Filed 1988·Granted Aug 21, 1990·7 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →