Inventor · disambiguated record
Georg Raming
Also filed as: RAMING GEORG
7 granted patents·2 pending applications·0 citations·filing 2011–2022
68Inventor score
Top patents by PatentIndex Score
9 records- 0156US9932690B2Device for producing a monocrystal by crystallizing said monocrystal in a melting areaSILTRONIC AG·Filed 2013·Granted Apr 3, 2018·0 cites·8 claims
- 0252US11390962B2Single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a single crystalSILTRONIC AG·Filed 2018·Granted Jul 19, 2022·0 cites·5 claims
- 0349US12104274B2Method and device for producing a single crystal of silicon, which single crystal is doped with n-type dopantSILTRONIC AG·Filed 2020·Granted Oct 1, 2024·0 cites·15 claims
- 0447US2025092563A1Device and method for producing a monocrystalline silicon rodSILTRONIC AG·Filed 2022·Application pending·0 cites
- 0545US9828693B2Apparatus and process for producing a crystal of semiconductor materialSILTRONIC AG·Filed 2015·Granted Nov 28, 2017·0 cites·20 claims
- 0645US8357590B2Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mmSILTRONIC AG·Filed 2011·Granted Jan 22, 2013·0 cites·2 claims
- 0744US9422634B2Method and apparatus for producing a single crystalSILTRONIC AG·Filed 2012·Granted Aug 23, 2016·0 cites·12 claims
- 0844US2012315428A1Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mmRAMING GEORG·Filed 2012·Application pending·0 cites
- 0938US9932691B2Method for growing a single crystal by crystallizing the single crystal from a float zoneSILTRONIC AG·Filed 2015·Granted Apr 3, 2018·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →