Inventor · disambiguated record
Gen Tada
Also filed as: TADA GEN
21 granted patents·1 pending application·473 citations·filing 1993–2023
95Inventor score
Files withFUJI ELECTRIC CO LTD15FUJI ELEC DEVICE TECH CO LTD3FUJI ELECTRIC HOLDINGS1FUJI ELECTRIC SYSTEMS CO LTD1MITSUBISHI ELECTRIC CORP1
Top patents by PatentIndex Score
22 records- 0193US5497021ACMOS structure with varying gate oxide thickness and with both different and like conductivity-type gate electrodesFUJI ELECTRIC CO LTD·Filed 1994·Granted Mar 5, 1996·96 cites·4 claims
- 0290US5545577AMethod of producing a semiconductor device having two MIS transistor circuitsFUJI ELECTRIC CO LTD·Filed 1993·Granted Aug 13, 1996·76 cites·3 claims
- 0388US6525390B2MIS semiconductor device with low on resistance and high breakdown voltageFUJI ELECTRIC CO LTD·Filed 2001·Granted Feb 25, 2003·49 cites·19 claims
- 0484US5436486AHigh voltage MIS transistor and semiconductor deviceFUJI ELECTRIC CO LTD·Filed 1993·Granted Jul 25, 1995·59 cites·7 claims
- 0584US5432370AHigh withstand voltage M I S field effect transistor and semiconductor integrated circuitFUJI ELECTRIC CO LTD·Filed 1994·Granted Jul 11, 1995·54 cites·22 claims
- 0682US7173454B2Display device driver circuitFUJI ELEC DEVICE TECH CO LTD·Filed 2005·Granted Feb 6, 2007·6 cites·20 claims
- 0779US5612564ASemiconductor device with limiter diodeFUJI ELECTRIC CO LTD·Filed 1995·Granted Mar 18, 1997·44 cites·8 claims
- 0873US7606082B2Semiconductor circuit, inverter circuit, semiconductor apparatus, and manufacturing method thereofFUJI ELEC DEVICE TECH CO LTD·Filed 2006·Granted Oct 20, 2009·3 cites·22 claims
- 0971US5973366AHigh voltage integrated circuitFUJI ELECTRIC CO LTD·Filed 1997·Granted Oct 26, 1999·31 cites·14 claims
- 1070US7687385B2Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the sameFUJI ELECTRIC HOLDINGS·Filed 2007·Granted Mar 30, 2010·2 cites·7 claims
- 1169US7876291B2Drive deviceFUJI ELECTRIC SYSTEMS CO LTD·Filed 2006·Granted Jan 25, 2011·2 cites·13 claims
- 1269US5495122AInsulated-gate semiconductor field effect transistor which operates with a low gate voltage and high drain and source voltagesFUJI ELECTRIC CO LTD·Filed 1994·Granted Feb 27, 1996·29 cites·3 claims
- 1362US6853034B2Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2001·Granted Feb 8, 2005·6 cites·7 claims
- 1452US6740952B2High withstand voltage semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2002·Granted May 25, 2004·5 cites·51 claims
- 1551US9401319B2Semiconductor deviceOGA TAKUYA·Filed 2011·Granted Jul 26, 2016·1 cites·14 claims
- 1651US7195980B2Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2005·Granted Mar 27, 2007·0 cites·9 claims
- 1749US2025108643A1Printing apparatusMITSUBISHI ELECTRIC CORP·Filed 2023·Application pending·0 cites
- 1847US6558983B2Semiconductor apparatus and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2001·Granted May 6, 2003·3 cites·3 claims
- 1944US7714363B2Semiconductor integrated circuit for driving the address of a display deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2007·Granted May 11, 2010·0 cites·16 claims
- 2043US6844598B2Lateral high breakdown voltage MOSFET and device provided therewithFUJI ELECTRIC CO LTD·Filed 2004·Granted Jan 18, 2005·1 cites·10 claims
- 2137US6818954B2Lateral high breakdown voltage MOSFET and device provided therewithFUJI ELECTRIC CO LTD·Filed 2002·Granted Nov 16, 2004·0 cites·25 claims
- 2235US6316794B1Lateral high voltage semiconductor device with protective silicon nitride film in voltage withstanding regionFUJI ELECTRIC CO LTD·Filed 1998·Granted Nov 13, 2001·6 cites·2 claims
Join the waitlist — get patent alerts
Get an alert when Gen Tada files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →