Inventor · disambiguated record
Gengming Tao
Also filed as: TAO GENGMING
41 granted patents·15 pending applications·168 citations·filing 2017–2020
97Inventor score
Files withQUALCOMM INC56
Top patents by PatentIndex Score
56 records- 0198US9875784B1Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systemsQUALCOMM INC·Filed 2017·Granted Jan 23, 2018·59 cites·30 claims
- 0295US10734384B1Vertically-integrated two-dimensional (2D) semiconductor slabs in complementary field effect transistor (CFET) cell circuits, and method of fabricatingQUALCOMM INC·Filed 2019·Granted Aug 4, 2020·11 cites·28 claims
- 0395US10205018B1Planar double gate semiconductor deviceQUALCOMM INC·Filed 2017·Granted Feb 12, 2019·12 cites·28 claims
- 0495US10084074B1Compound semiconductor field effect transistor gate length scalingQUALCOMM INC·Filed 2017·Granted Sep 25, 2018·10 cites·14 claims
- 0594US10043826B1Fully depleted silicon on insulator integrationQUALCOMM INC·Filed 2017·Granted Aug 7, 2018·9 cites·15 claims
- 0693US10431581B1Complementary metal-oxide semiconductor (CMOS) integration with compound semiconductor devicesQUALCOMM INC·Filed 2018·Granted Oct 1, 2019·8 cites·29 claims
- 0792US10482929B2Non-volative (NV) memory (NVM) matrix circuits employing NVM matrix circuits for performing matrix computationsQUALCOMM INC·Filed 2017·Granted Nov 19, 2019·9 cites·29 claims
- 0892US10186514B1Bi-stable static random access memory (SRAM) bit cells formed from III-V compounds and configured to achieve higher operating speedsQUALCOMM INC·Filed 2017·Granted Jan 22, 2019·7 cites·29 claims
- 0991US10062683B1Compound semiconductor transistor and high-Q passive device single chip integrationQUALCOMM INC·Filed 2017·Granted Aug 28, 2018·7 cites·27 claims
- 1089US10224368B2Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit pathQUALCOMM INC·Filed 2017·Granted Mar 5, 2019·9 cites·30 claims
- 1186US10490639B2Low collector contact resistance heterojunction bipolar transistorsQUALCOMM INC·Filed 2018·Granted Nov 26, 2019·3 cites·13 claims
- 1283US10896981B1Integration of vertical GaN varactor with HEMTQUALCOMM INC·Filed 2019·Granted Jan 19, 2021·3 cites·25 claims
- 1383US10672807B1Photo detectorsQUALCOMM INC·Filed 2018·Granted Jun 2, 2020·3 cites·28 claims
- 1481US11201193B2Vertically stacked multilayer high-density RRAMQUALCOMM INC·Filed 2020·Granted Dec 14, 2021·1 cites·16 claims
- 1580US10026731B1Compound semiconductor transistor integration with high density capacitorQUALCOMM INC·Filed 2017·Granted Jul 17, 2018·3 cites·22 claims
- 1678US10971615B2High power performance gallium nitride high electron mobility transistor with ledges and field platesQUALCOMM INC·Filed 2018·Granted Apr 6, 2021·2 cites·10 claims
- 1778US10319830B2Heterojunction bipolar transistor power amplifier with backside thermal heatsinkQUALCOMM INC·Filed 2017·Granted Jun 11, 2019·2 cites·10 claims
- 1876US10483287B1Double gate, flexible thin-film transistor (TFT) complementary metal-oxide semiconductor (MOS) (CMOS) circuits and related fabrication methodsQUALCOMM INC·Filed 2018·Granted Nov 19, 2019·2 cites·15 claims
- 1973US10886266B1Integration of vertical GaN varactor with HEMTQUALCOMM INC·Filed 2019·Granted Jan 5, 2021·1 cites·16 claims
- 2073US10396188B1Heterojunction bipolar transistors and method of fabricating the sameQUALCOMM INC·Filed 2018·Granted Aug 27, 2019·1 cites·25 claims
- 2173US10134881B1Quantum well thermal sensing for power amplifierQUALCOMM INC·Filed 2017·Granted Nov 20, 2018·2 cites·18 claims
- 2270US10312244B2Bi-stable static random access memory (SRAM) bit cells that facilitate direct writing for storageQUALCOMM INC·Filed 2017·Granted Jun 4, 2019·1 cites·20 claims
- 2368US10283650B2Silicon on insulator (SOI) transcap integration providing front and back gate capacitance tuningQUALCOMM INC·Filed 2017·Granted May 7, 2019·1 cites·30 claims
- 2468US10158030B2CMOS and bipolar device integration including a tunable capacitorQUALCOMM INC·Filed 2017·Granted Dec 18, 2018·1 cites·20 claims
- 2565US10475889B1Gallium nitride power amplifier integration with metal-oxide-semiconductor devicesQUALCOMM INC·Filed 2018·Granted Nov 12, 2019·1 cites·19 claims
- 2664US11437781B2Distributed feedback (DFB) laser on silicon and integrated device comprising a DFB laser on siliconQUALCOMM INC·Filed 2020·Granted Sep 6, 2022·0 cites·35 claims
- 2758US2020052078A1Low collector contact resistance heterojunction bipolar transistorsQUALCOMM INC·Filed 2019·Application pending·0 cites
- 2857US10164054B2Compound semiconductor field effect transistor with self-aligned gateQUALCOMM INC·Filed 2017·Granted Dec 25, 2018·0 cites·13 claims
- 2956US11545404B2III-V compound semiconductor dies with stress-treated inactive surfaces to avoid packaging-induced fractures, and related methodsQUALCOMM INC·Filed 2020·Granted Jan 3, 2023·0 cites·13 claims
- 3056US2019088765A1Compound semiconductor field effect transistor with self-aligned gateQUALCOMM INC·Filed 2018·Application pending·0 cites
- 3154US2019245058A1Heterojunction bipolar transistor power amplifier with backside thermal heatsinkQUALCOMM INC·Filed 2019·Application pending·0 cites
- 3253US10580908B2Variable thickness gate oxide transcapQUALCOMM INC·Filed 2018·Granted Mar 3, 2020·0 cites·19 claims
- 3352US11515406B2Heterojunction bipolar transistor with field platesQUALCOMM INC·Filed 2019·Granted Nov 29, 2022·0 cites·23 claims
- 3452US10622465B2Heterojunction bipolar transistor (HBT)QUALCOMM INC·Filed 2018·Granted Apr 14, 2020·0 cites·14 claims
- 3552US10615294B2Variable capacitorQUALCOMM INC·Filed 2018·Granted Apr 7, 2020·0 cites·12 claims
- 3651US10615988B2Compact and reliable physical unclonable function devices and methodsQUALCOMM INC·Filed 2018·Granted Apr 7, 2020·0 cites·25 claims
- 3751US10170610B1Pseudomorphic high electron mobility transistor with low contact resistanceQUALCOMM INC·Filed 2018·Granted Jan 1, 2019·0 cites·17 claims
- 3850US10749017B1Heterojunction bipolar transistors with field platesQUALCOMM INC·Filed 2019·Granted Aug 18, 2020·0 cites·25 claims
- 3949US10109724B2Heterojunction bipolar transistor unit cell and power stage for a power amplifierQUALCOMM INC·Filed 2017·Granted Oct 23, 2018·0 cites·17 claims
- 4048US10615113B2Rotated metal-oxide-metal (RTMOM) capacitorQUALCOMM INC·Filed 2018·Granted Apr 7, 2020·0 cites·20 claims
- 4147US10522367B2Gettering layer formation and substrateQUALCOMM INC·Filed 2017·Granted Dec 31, 2019·0 cites·19 claims
- 4247US2022131013A1Multi-channel gate-all-around high-electron-mobility transistorQUALCOMM INC·Filed 2020·Application pending·0 cites
- 4346US10461164B2Compound semiconductor field effect transistor with self-aligned gateQUALCOMM INC·Filed 2017·Granted Oct 29, 2019·0 cites·17 claims
- 4446US2021098533A1Vertical resistive random access memoryQUALCOMM INC·Filed 2019·Application pending·0 cites
- 4545US10756206B2High power compound semiconductor field effect transistor devices with low doped drainQUALCOMM INC·Filed 2017·Granted Aug 25, 2020·0 cites·24 claims
- 4645US2021036222A1Gate-all-around resistive random access memory (rram)QUALCOMM INC·Filed 2019·Application pending·0 cites
- 4744US2020152739A1Transistors with low contact resistance and method of fabricating the sameQUALCOMM INC·Filed 2018·Application pending·0 cites
- 4844US2020091448A1THREE-DIMENSIONAL (3D) CARBON NANOTUBE GATE METAL OXIDE (MOS) FIELD-EFFECT TRANSISTORS (FETs) (MOSFETS), AND RELATED FABRICATION PROCESSESQUALCOMM INC·Filed 2018·Application pending·0 cites
- 4943US10868161B2Low resistance source/drain regions in III-V transistorsQUALCOMM INC·Filed 2018·Granted Dec 15, 2020·0 cites·10 claims
- 5043US2020388628A1Discontinuous charge trap layer memory deviceQUALCOMM INC·Filed 2019·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Gengming Tao files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →