Inventor · disambiguated record
Georg Tempel
Also filed as: TEMPEL GEORG
51 granted patents·5 pending applications·475 citations·filing 1996–2016
98Inventor score
Top patents by PatentIndex Score
56 records- 0196US7190022B2One transistor flash memory cellINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 13, 2007·29 cites·20 claims
- 0289US6909139B2One transistor flash memory cellINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 21, 2005·32 cites·30 claims
- 0387US9263154B2Method and device for evaluating a chip manufacturing processINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 16, 2016·6 cites·14 claims
- 0487US6628544B2Flash memory cell and method to achieve multiple bits per cellINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 30, 2003·43 cites·12 claims
- 0585US7291881B2Bit line structure and method of fabricationINFINEON TECHNOLOGIES AG·Filed 2006·Granted Nov 6, 2007·10 cites·28 claims
- 0685US7262456B2Bit line structure and production method thereofINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 28, 2007·10 cites·19 claims
- 0785US5828092ASemiconductor memory device and method for its productionSIEMENS AG·Filed 1996·Granted Oct 27, 1998·55 cites·10 claims
- 0884US8691660B2Semiconductor component with trench isolation and corresponding production methodSCHULER FRANZ·Filed 2010·Granted Apr 8, 2014·7 cites·21 claims
- 0984US5943255ARead only memorySIEMENS AG·Filed 1998·Granted Aug 24, 1999·59 cites·13 claims
- 1081US8247861B2Semiconductor device and method of making sameTEMPEL GEORG·Filed 2007·Granted Aug 21, 2012·11 cites·35 claims
- 1178US7399673B2Method of forming a charge-trapping memory deviceINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jul 15, 2008·6 cites·17 claims
- 1275US7687842B2Bit line structure and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 30, 2010·4 cites·2 claims
- 1375US7361924B2Non-volatile memory element and production method thereof and storage memory arrangementINFINEON TECHNOLOGIES AG·Filed 2003·Granted Apr 22, 2008·17 cites·23 claims
- 1474US6787843B2Nonvolatile semiconductor memory cell and associated semiconductor circuit configuration and method for the fabrication of the circuit configurationINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 7, 2004·14 cites·21 claims
- 1572US8940603B2Method of making semiconductor deviceTEMPEL GEORG·Filed 2012·Granted Jan 27, 2015·3 cites·7 claims
- 1671US6531359B1Method for fabricating a memory cell arrayINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 11, 2003·14 cites·22 claims
- 1768US7709884B2Non-volatile two transistor semiconductor memory cell and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 4, 2010·2 cites·4 claims
- 1868US5970338AMethod of producing an EEPROM semiconductor structureSIEMENS AG·Filed 1998·Granted Oct 19, 1999·25 cites·4 claims
- 1966US6083765AMethod for producing semiconductor memory device having a capacitorSIEMENS AG·Filed 1998·Granted Jul 4, 2000·21 cites·7 claims
- 2064US7138333B2Process for sealing plasma-damaged, porous low-k materialsINFINEON TECHNOLOGIES AG·Filed 2004·Granted Nov 21, 2006·9 cites·14 claims
- 2164US5869860AFerroelectric memory device and method for producing the deviceSIEMENS AG·Filed 1996·Granted Feb 9, 1999·16 cites·6 claims
- 2263US7847325B2Method of making discrete trap memory (DTM) mediated by fullerenesINFINEON TECHNOLOGIES AG·Filed 2009·Granted Dec 7, 2010·4 cites·20 claims
- 2362US6025626ANonvolatile memory cellSIEMENS AG·Filed 1999·Granted Feb 15, 2000·18 cites·4 claims
- 2460US6232169B1Method for producing a capacitorINFINEON TECHNOLOGIES AG·Filed 1998·Granted May 15, 2001·13 cites·7 claims
- 2558US8154090B2Non-volatile two-transistor semiconductor memory cell and method for producing the sameSCHULER FRANZ·Filed 2008·Granted Apr 10, 2012·1 cites·10 claims
- 2658US7018898B2Non-volatile two transistor semiconductor memory cell and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 28, 2006·5 cites·9 claims
- 2756US8198681B2Semiconductor component with stress-absorbing semiconductor layerTEMPEL GEORG·Filed 2009·Granted Jun 12, 2012·0 cites·15 claims
- 2856US8159020B2Non-volatile two transistor semiconductor memory cell and method for producing the sameSCHULER FRANZ·Filed 2009·Granted Apr 17, 2012·0 cites·4 claims
- 2956US7349251B2Integrated memory circuit arrangementINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 25, 2008·3 cites·18 claims
- 3056US7060558B2Method for fabricating a field-effect transistor having a floating gateINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 13, 2006·7 cites·19 claims
- 3155US9299712B2Semiconductor device and method of making sameINFINEON TECHNOLOGIES AG·Filed 2014·Granted Mar 29, 2016·0 cites·12 claims
- 3254US7442756B2Polymer for sealing porous materials during chip productionINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 28, 2008·4 cites·24 claims
- 3353US9460810B2Method and device for evaluating a chip manufacturing processINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 4, 2016·0 cites·16 claims
- 3448US8552524B2Semiconductor component with trench insulation and corresponding production methodSCHULER FRANZ·Filed 2003·Granted Oct 8, 2013·3 cites·6 claims
- 3548US7709836B2Detector arrangement, method for the detection of electrical charge carriers and use of an ONO field effect transistor for detection of an electrical chargeINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 4, 2010·2 cites·9 claims
- 3648US6468812B2Method for producing a semiconductor memory device with a multiplicity of memory cellsINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 22, 2002·2 cites·4 claims
- 3747US7541637B2Non-volatile semiconductor memory element and corresponding production and operation methodINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 2, 2009·3 cites·19 claims
- 3846US8629034B2Nonvolatile memory element and production method thereof and storage memory arrangementINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jan 14, 2014·0 cites·8 claims
- 3946US7176088B2Bitline structure and method for production thereofINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 13, 2007·2 cites·57 claims
- 4044US9419619B2Chip and method for identifying a chipINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 16, 2016·0 cites·15 claims
- 4143US8377791B2Nonvolatile memory element and production method thereof and storage memory arrangementINFINEON TECHNOLOGIES AG·Filed 2011·Granted Feb 19, 2013·0 cites·2 claims
- 4243US8193059B2Bit line structure and method for the production thereofKAKOSCHKE RONALD·Filed 2010·Granted Jun 5, 2012·0 cites·12 claims
- 4343US5925905AMOS circuit configuration for switching high voltages on a semiconductor chipSIEMENS AG·Filed 1997·Granted Jul 20, 1999·8 cites·9 claims
- 4442US7642544B2Production method for semiconductor component with stress-carrying semiconductor layerINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 5, 2010·0 cites·20 claims
- 4541US7923342B2Nonvolatile memory element and production method thereof and storage memory arrangementINFINEON TECHNOLOGIES AG·Filed 2008·Granted Apr 12, 2011·0 cites·10 claims
- 4637US7528038B2Non-volatile two-transistor semiconductor memory cell and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 5, 2009·0 cites·11 claims
- 4737US5883832AElectrically erasable and programmable non-volatile storage locationSIEMENS AG·Filed 1996·Granted Mar 16, 1999·5 cites·7 claims
- 4835US2007263445A1Non-volatile memory cell arrayEMDEN WALTER V·Filed 2006·Application pending·0 cites
- 4934US6800893B2Semiconductor circuit configuration and associated fabrication methodINFINEON TECHNOLOIGES AG·Filed 2003·Granted Oct 5, 2004·0 cites·20 claims
- 5034US2008296662A1Discrete Trap Memory (DTM) Mediated by FullerenesPOEPPEL GERHARD·Filed 2007·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →