Inventor · disambiguated record
Georgios Vellianitis
Also filed as: VELLIANITIS GEORGIOS
122 granted patents·41 pending applications·735 citations·filing 2010–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD147TAIWAN SEMICONDUCTOR MFG8VELLIANITIS GEORGIOS7VAN DAL MARK1
Top patents by PatentIndex Score
163 records- 0199US9214555B2Barrier layer for FinFET channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 15, 2015·591 cites·18 claims
- 0298US12148814B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·2 cites·20 claims
- 0397US11527552B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·5 cites·20 claims
- 0497US9711608B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·21 cites·20 claims
- 0594US11791420B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
- 0693US11482609B2Ferroelectric channel field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 25, 2022·2 cites·20 claims
- 0793US11069813B2Localized heating in laser annealing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·6 cites·20 claims
- 0893US9761666B2Strained channel field effect transistorVAN DAL MARK·Filed 2011·Granted Sep 12, 2017·10 cites·7 claims
- 0992US11869949B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·1 cites·20 claims
- 1092US11784234B2Ferroelectric channel field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·1 cites·20 claims
- 1192US11594603B2Multigate device having reduced contact resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·2 cites·20 claims
- 1292US11569352B2Protrusion field-effect transistor and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·2 cites·20 claims
- 1392US8987835B2FinFET with a buried semiconductor material between two finsVELLIANITIS GEORGIOS·Filed 2012·Granted Mar 24, 2015·11 cites·20 claims
- 1491US11450748B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
- 1591US11387362B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 12, 2022·6 cites·20 claims
- 1691US9368604B1Method of removing threading dislocation defect from a fin feature of III-V group semiconductor materialTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·9 cites·20 claims
- 1791US8119494B1Defect-free hetero-epitaxy of lattice mismatched semiconductorsVELLIANITIS GEORGIOS·Filed 2010·Granted Feb 21, 2012·13 cites·20 claims
- 1890US12206024B2Transistors including crystalline raised active regions and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·1 cites·20 claims
- 1990US11430512B2Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 30, 2022·2 cites·20 claims
- 2090US10332970B2Method for manufacturing horizontal-gate-all-around devices with different number of nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 25, 2019·6 cites·4 claims
- 2190US9412871B2FinFET with channel backside passivation layer device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·11 cites·15 claims
- 2289US11769798B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·1 cites·20 claims
- 2389US11322495B2Complementary metal-oxide-semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·2 cites·20 claims
- 2488US11587786B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·1 cites·20 claims
- 2588US8779554B2MOSFETs with channels on nothing and methods for forming the sameVELLIANITIS GEORGIOS·Filed 2012·Granted Jul 15, 2014·5 cites·18 claims
- 2688US2024395906A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2787US2025359182A1Access transistor including a metal oxide barrier layer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2887US2025301713A1Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2986US11869975B2Thin-film transistors and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 9, 2024·1 cites·20 claims
- 3086US2025151347A1Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3185US11411089B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·1 cites·20 claims
- 3285US9312344B2Methods for forming semiconductor materials in STI trenchesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 12, 2016·4 cites·19 claims
- 3384US12218198B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 3483US12490456B2Multigate device having reduced contact resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 2, 2025·0 cites·20 claims
- 3583US12166084B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 10, 2024·0 cites·20 claims
- 3683US11901451B2Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 13, 2024·0 cites·20 claims
- 3783US2024372006A1Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3882US12324360B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 3982US12191375B2Ferroelectric channel field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 4082US12051702B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
- 4182US10332965B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 25, 2019·2 cites·20 claims
- 4281US12453295B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 4381US12402355B2Access transistor including a metal oxide barrier layer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 4481US12159942B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 4580US12363957B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 4680US12057489B2Ferroelectric field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·0 cites·20 claims
- 4780US12034052B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 4880US11764290B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 4980US2025081603A1Complementary metal-oxide-semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5080US2025072076A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 163 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →