Inventor · disambiguated record
Gengyu Yang
Also filed as: YANG GENGYU
4 granted patents·2 pending applications·10 citations·filing 2011–2021
63Inventor score
Top patents by PatentIndex Score
6 records- 0184US8564031B2High voltage-resistant lateral double-diffused transistor based on nanowire deviceHUANG RU·Filed 2011·Granted Oct 22, 2013·9 cites·7 claims
- 0251US8633465B2Multilevel resistive memory having large storage capacityHUANG RU·Filed 2012·Granted Jan 21, 2014·1 cites·20 claims
- 0350US11848555B2Method and system for evaluating stability of HVDC receiving end system, and storage mediumUNIV NORTH CHINA ELECTRIC POWER·Filed 2021·Granted Dec 19, 2023·0 cites·10 claims
- 0441US2014145139A1Transparent flexible resistive memory and fabrication method thereofHUANG RU·Filed 2012·Application pending·0 cites
- 0537US8526242B2Flash memory and fabrication method and operation method for the sameHUANG RU·Filed 2011·Granted Sep 3, 2013·0 cites·3 claims
- 0632US2013217199A1Method for fabricating resistive memory deviceHUANG RU·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →