Inventor · disambiguated record
Gil-Heyun Choi
Also filed as: CHOI GIL-HEYUN · CHOI GIL-HEYUN CHOI
154 granted patents·66 pending applications·4,931 citations·filing 1994–2024
99Inventor score
Top patents by PatentIndex Score
220 records- 0198US8354308B2Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrateSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 15, 2013·230 cites·13 claims
- 0298US7432185B2Method of forming semiconductor device having stacked transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 7, 2008·183 cites·4 claims
- 0398US7381989B2Semiconductor device including upper and lower transistors and interconnection between upper and lower transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 3, 2008·182 cites·23 claims
- 0498US6590251B2Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 8, 2003·627 cites·13 claims
- 0598US6399491B2Method of manufacturing a barrier metal layer using atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 4, 2002·342 cites·11 claims
- 0698US6348376B2Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 19, 2002·254 cites·11 claims
- 0798US6287965B1Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 11, 2001·1.3k cites·23 claims
- 0897US6815285B2Methods of forming dual gate semiconductor devices having a metal nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·147 cites·27 claims
- 0997US6458701B1Method for forming metal layer of semiconductor device using metal halide gasSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 1, 2002·238 cites·10 claims
- 1097US6391769B1Method for forming metal interconnection in semiconductor device and interconnection structure fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 21, 2002·177 cites·21 claims
- 1196US8076234B1Semiconductor device and method of fabricating the same including a conductive structure is formed through at least one dielectric layer after forming a via structurePARK BYUNG-LYUL·Filed 2010·Granted Dec 13, 2011·40 cites·19 claims
- 1296US7687331B2Stacked semiconductor device and method of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 30, 2010·54 cites·9 claims
- 1395US8957526B2Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packagesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 17, 2015·19 cites·8 claims
- 1495US8466052B2Method of fabricating semiconductor device having buried wiringBAEK JONG-MIN·Filed 2010·Granted Jun 18, 2013·44 cites·18 claims
- 1594US8390120B2Semiconductor device and method of fabricating the sameMOON KWANG-JIN·Filed 2010·Granted Mar 5, 2013·29 cites·29 claims
- 1694US6893915B2Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 17, 2005·84 cites·20 claims
- 1793US8592310B2Methods of manufacturing a semiconductor devicePARK BYUNG-LYUL·Filed 2011·Granted Nov 26, 2013·18 cites·20 claims
- 1892US8952543B2Via connection structures, semiconductor devices having the same, and methods of fabricating the structures and devicesLEE HO-JIN·Filed 2012·Granted Feb 10, 2015·15 cites·25 claims
- 1992US8884440B2Integrated circuit device including through-silicon via structure having offset interfaceKIM SU-KYOUNG·Filed 2012·Granted Nov 11, 2014·19 cites·19 claims
- 2092US7081409B2Methods of producing integrated circuit devices utilizing tantalum amine derivativesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 25, 2006·50 cites·19 claims
- 2191US7098131B2Methods for forming atomic layers and thin films including tantalum nitride and devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 29, 2006·48 cites·25 claims
- 2290US7842600B2Methods of forming interlayer dielectrics having air gapsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 30, 2010·19 cites·16 claims
- 2390US6432820B1Method of selectively depositing a metal layer in an opening in a dielectric layer by forming a metal-deposition-prevention layer around the opening of the dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 13, 2002·43 cites·33 claims
- 2489US6787460B2Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recesses and conductive contacts so formedSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 7, 2004·44 cites·24 claims
- 2587US9018768B2Integrated circuit having through silicon via structure with minimized deteriorationPARK BYUNG-LYUL·Filed 2012·Granted Apr 28, 2015·10 cites·7 claims
- 2687US8547747B2Non-volatile memory deviceKIM SU-KYOUNG·Filed 2011·Granted Oct 1, 2013·12 cites·19 claims
- 2787US7833855B2Methods of producing integrated circuit devices utilizing tantalum amine derivativesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 16, 2010·10 cites·33 claims
- 2887US7452811B2Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 18, 2008·10 cites·10 claims
- 2986US8546256B2Method of forming semiconductor deviceJUNG DEOK-YOUNG·Filed 2011·Granted Oct 1, 2013·7 cites·20 claims
- 3086US5843843AMethod for forming a wiring layer a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 1, 1998·84 cites·20 claims
- 3185US8696921B2Method of manufacturing a semiconductor devicePARK JIN-HO·Filed 2010·Granted Apr 15, 2014·8 cites·11 claims
- 3285US7696552B2Semiconductor devices including high-k dielectric materialsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 13, 2010·12 cites·7 claims
- 3385US7244645B2Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers and related structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 17, 2007·10 cites·20 claims
- 3485US7148100B2Methods of forming electronic devices including high-k dielectric layers and electrode barrier layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 12, 2006·30 cites·7 claims
- 3585US6787468B2Method of fabricating metal lines in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 7, 2004·40 cites·3 claims
- 3684US8873901B2Buried-type optical input/output devices and methods of manufacturing the sameKANG PIL-KYU·Filed 2012·Granted Oct 28, 2014·6 cites·20 claims
- 3784US7534709B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 19, 2009·12 cites·10 claims
- 3883US9236349B2Semiconductor device including through via structures and redistribution structuresSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 12, 2016·6 cites·20 claims
- 3983US8304343B2Method of manufacturing a metal wiring structureCHOI KYUNG-IN·Filed 2011·Granted Nov 6, 2012·6 cites·22 claims
- 4083US8278207B2Methods of manufacturing semiconductor devicesPARK JIN-HO·Filed 2010·Granted Oct 2, 2012·6 cites·8 claims
- 4183US7521357B2Methods of forming metal wiring in semiconductor devices using etch stop layersSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 21, 2009·7 cites·24 claims
- 4282US8530329B2Methods of fabricating semiconductor devices having various isolation regionsCHOI YONG-SOON·Filed 2011·Granted Sep 10, 2013·9 cites·11 claims
- 4382US7521316B2Methods of forming gate structures for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 21, 2009·8 cites·46 claims
- 4482US7223689B2Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·6 cites·14 claims
- 4581US9103974B2Semiconductor devices having optical transceiverKANG PIL-KYU·Filed 2012·Granted Aug 11, 2015·5 cites·13 claims
- 4681US7544597B2Method of forming a semiconductor device including an ohmic layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 9, 2009·3 cites·20 claims
- 4781US7435634B2Methods of forming semiconductor devices having stacked transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·8 cites·28 claims
- 4881US7214620B2Methods of forming silicide films with metal films in semiconductor devices and contacts including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 8, 2007·26 cites·20 claims
- 4980US9698051B2Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packagesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 4, 2017·3 cites·19 claims
- 5080US8860221B2Electrode connecting structures containing copperSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Oct 14, 2014·5 cites·20 claims
Showing the top 50 of 220 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →