Inventor · disambiguated record
Giuseppe Curro
Also filed as: CURRO PRIME GIUSEPPE · CURRO' GIUSEPPE
10 granted patents·36 citations·filing 2000–2016
85Inventor score
Top patents by PatentIndex Score
10 records- 0171US6887760B2Fabrication process of a trench gate power MOS transistor with scaled channelST MICROELECTRONICS SRL·Filed 2003·Granted May 3, 2005·22 cites·32 claims
- 0268USD790347SBottleBRUNI GLASS S P A·Filed 2016·Granted Jun 27, 2017·7 cites·1 claims
- 0361US8187943B2MOS device resistant to ionizing radiationCASCIO ALESSANDRA·Filed 2010·Granted May 29, 2012·2 cites·23 claims
- 0461US7791147B2MOS device resistant to ionizing radiationST MICROELECTRONICS SRL·Filed 2007·Granted Sep 7, 2010·2 cites·23 claims
- 0547US6762123B2Moisture corrosion inhibitor layer for Al-alloy metallization layers, particularly for electronic devices and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2003·Granted Jul 13, 2004·3 cites·23 claims
- 0641US8324669B2Process for manufacturing a MOS device with intercell ion implant confined to the gate electrode regionCURRO GIUSEPPE·Filed 2011·Granted Dec 4, 2012·0 cites·23 claims
- 0740US8471330B2MOS device resistant to ionizing radiationCASCIO ALESSANDRA·Filed 2010·Granted Jun 25, 2013·0 cites·16 claims
- 0838US8158463B2Process and method for manufacturing a MOS device with intercell ion implant using one or more parallel enrichment windowsCURRO' GIUSEPPE·Filed 2006·Granted Apr 17, 2012·0 cites·15 claims
- 0934US7344966B2Manufacturing method for a power device having an auto-aligned double thickness gate layer and corresponding deviceST MICROELECTRONICS SRL·Filed 2004·Granted Mar 18, 2008·0 cites·29 claims
- 1034US6525404B1Moisture corrosion inhibitor layer for Al-alloy metallization layers, particularly for electronic devices and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2000·Granted Feb 25, 2003·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →