Inventor · disambiguated record
Giuseppe Ferla
Also filed as: FERLA GIUSEPPE
67 granted patents·1 pending application·1,016 citations·filing 1979–2013
99Inventor score
Files withSGS THOMSON MICROELECTRONICS27ST MICROELECTRONICS SRL22CONS RIC MICROELETTRONICA5ATES COMPONENTI ELETTRON4FINOCCHIARO ALESSANDRO2
Top patents by PatentIndex Score
68 records- 0195US6365930B1Edge termination of semiconductor devices for high voltages with resistive voltage dividerST MICROELECTRONICS SRL·Filed 2000·Granted Apr 2, 2002·149 cites·7 claims
- 0289US5817546AProcess of making a MOS-technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Oct 6, 1998·86 cites·30 claims
- 0387US4667393AMethod for the manufacture of semiconductor devices with planar junctions having a variable charge concentration and a very high breakdown voltageSGS MICROELETTRONICA SPA·Filed 1985·Granted May 26, 1987·53 cites·5 claims
- 0486US6228719B1MOS technology power device with low output resistance and low capacitance, and related manufacturing processST MICROELECTRONICS SRL·Filed 1999·Granted May 8, 2001·65 cites·19 claims
- 0586US5981343ASingle feature size mos technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Nov 9, 1999·43 cites·35 claims
- 0681US7875936B2Power MOS electronic device and corresponding realizing methodST MICROELECTRONICS SRL·Filed 2005·Granted Jan 25, 2011·6 cites·13 claims
- 0781US7569883B2Switching-controlled power MOS electronic deviceST MICROELECTRONICS SRL·Filed 2005·Granted Aug 4, 2009·7 cites·12 claims
- 0878US5900662AMOS technology power device with low output resistance and low capacitance, and related manufacturing processSGS THOMSON MICROELECTRONICS·Filed 1996·Granted May 4, 1999·45 cites·65 claims
- 0978US5631483APower device integrated structure with low saturation voltageST MICROELECTRONICS SRL·Filed 1995·Granted May 20, 1997·45 cites·15 claims
- 1074US5670392AProcess for manufacturing high-density MOS-technology power devicesST MICROELECTRONICS SRL·Filed 1995·Granted Sep 23, 1997·41 cites·24 claims
- 1173US8895370B2Vertical conduction power electronic device and corresponding realization methodST MICROELECTRONICS SRL·Filed 2013·Granted Nov 25, 2014·2 cites·19 claims
- 1272US7601610B2Method for manufacturing a high integration density power MOS deviceST MICROELECTRONICS SRL·Filed 2005·Granted Oct 13, 2009·5 cites·12 claims
- 1372US4277291AProcess for making CMOS field-effect transistorsATES COMPONENTI ELETTRON·Filed 1980·Granted Jul 7, 1981·35 cites·4 claims
- 1468US5981998ASingle feature size MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Nov 9, 1999·18 cites·32 claims
- 1566US9191072B2RF identification device with near-field-coupled antennaFINOCCHIARO ALESSANDRO·Filed 2012·Granted Nov 17, 2015·2 cites·16 claims
- 1665US5811335ASemiconductor electronic device with autoaligned polysilicon and silicide control terminalCONSORZIO PER LA RICERA SULLA·Filed 1996·Granted Sep 22, 1998·22 cites·4 claims
- 1764US6051862AMOS-technology power device integrated structureSGS THOMSON MICROELECTRONICS·Filed 1998·Granted Apr 18, 2000·21 cites·101 claims
- 1862US7304335B2Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performance and high scaling down densityST MICROELECTRONICS SRL·Filed 2006·Granted Dec 4, 2007·2 cites·7 claims
- 1962US5933733AZero thermal budget manufacturing process for MOS-technology power devicesSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Aug 3, 1999·24 cites·53 claims
- 2061US6054737AHigh density MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Apr 25, 2000·16 cites·27 claims
- 2161US5065213AIntegrated high-voltage bipolar power transistor and low voltage mos power transistor structure in the emitter switching configuration and relative manufacturing processSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Nov 12, 1991·16 cites·2 claims
- 2260US5933734AHigh speed MOS-technology power device integrated structure, and related manufacturing processSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Aug 3, 1999·22 cites·7 claims
- 2360US5874338AMOS-technology power device and process of making sameSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Feb 23, 1999·20 cites·34 claims
- 2460US5118635AIntegrated high-voltage bipolar power transistor and low voltage mos power transistor structure in the emitter switching configuration and relative manufacturing processSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Jun 2, 1992·16 cites·2 claims
- 2559US5580663AElectro-luminescent material, solid state electro-luminescent device and process for fabrication thereofCONS RIC MICROELETTRONICA·Filed 1994·Granted Dec 3, 1996·18 cites·18 claims
- 2658US7067363B2Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down densityST MICROELECTRONICS SRL·Filed 2003·Granted Jun 27, 2006·7 cites·13 claims
- 2757US9154188B2RF identification device with near-field-coupled antennaFINOCCHIARO ALESSANDRO·Filed 2008·Granted Oct 6, 2015·1 cites·6 claims
- 2857US5883412ALow gate resistance high-speed MOS-technology integrated structureSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Mar 16, 1999·19 cites·16 claims
- 2956US6140679AZero thermal budget manufacturing process for MOS-technology power devicesSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Oct 31, 2000·17 cites·30 claims
- 3056US5985721ASingle feature size MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Nov 16, 1999·10 cites·39 claims
- 3155US6724009B2Semiconductor integrated electronic device and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2002·Granted Apr 20, 2004·5 cites·17 claims
- 3253US6806170B2Method for forming an interface free layer of silicon on a substrate of monocrystalline siliconST MICROELECTRONICS SRL·Filed 2002·Granted Oct 19, 2004·4 cites·15 claims
- 3353US5841167AMOS-technology power device integrated structureSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Nov 24, 1998·13 cites·47 claims
- 3452US5667905AElectro-luminescent material, solid state electro-luminescent device and process for fabrication thereofCONS RIC MICROELETTRONICA·Filed 1995·Granted Sep 16, 1997·17 cites·21 claims
- 3551US8013384B2Method for manufacturing a high integration density power MOS deviceST MICROELECTRONICS SRL·Filed 2009·Granted Sep 6, 2011·0 cites·15 claims
- 3650US8482085B2Power MOS electronic device and corresponding realizing methodMAGRI ANGELO·Filed 2010·Granted Jul 9, 2013·0 cites·14 claims
- 3750US8420487B2Power MOS electronic device and corresponding realizing methodMAGRI ANGELO·Filed 2010·Granted Apr 16, 2013·0 cites·10 claims
- 3850US6278329B1Low-noise amplifier stage with matching networkST MICROELECTRONICS SRL·Filed 1999·Granted Aug 21, 2001·12 cites·15 claims
- 3949US6468866B2Single feature size MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1999·Granted Oct 22, 2002·7 cites·10 claims
- 4049US6369425B1High-density power deviceSGS THOMSON MICROELECTTRONICA·Filed 1997·Granted Apr 9, 2002·15 cites·16 claims
- 4148US8624332B2Vertical conduction power electronic device and corresponding realization methodFRISINA FERRUCCIO·Filed 2005·Granted Jan 7, 2014·0 cites·19 claims
- 4247US6566690B2Single feature size MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1999·Granted May 20, 2003·6 cites·20 claims
- 4346US6890806B2Semiconductor integrated electronic device and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2004·Granted May 10, 2005·2 cites·20 claims
- 4443US6642121B2Control of amount and uniformity of oxidation at the interface of an emitter region of a monocrystalline silicon wafer and a polysilicon layer formed by chemical vapor depositionST MICROELECTRONICS SRL·Filed 2001·Granted Nov 4, 2003·3 cites·18 claims
- 4543US6064087ASingle feature size MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1996·Granted May 16, 2000·5 cites·24 claims
- 4643US5631476AMOS-technology power device chip and package assemblyST MICROELECTRONICS SRL·Filed 1995·Granted May 20, 1997·9 cites·11 claims
- 4741US6030870AHigh density MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Feb 29, 2000·5 cites·37 claims
- 4840US5250821AElectronic power device having plural elementary semiconductor components connected in parallelSGS THOMSON MICROELECTRONISC S·Filed 1992·Granted Oct 5, 1993·14 cites·11 claims
- 4939US6756259B2Gate insulating structure for power devices, and related manufacturing processST MICROELECTRONICS SRL·Filed 2002·Granted Jun 29, 2004·0 cites·16 claims
- 5038US5851855AProcess for manufacturing a MOS-technology power device chip and package assemblySGS THOMSON MICROELECTRONICS·Filed 1997·Granted Dec 22, 1998·6 cites·23 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Giuseppe Ferla files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →