Inventor · disambiguated record
Gi-Gwan Park
Also filed as: PARK GI GWAN
62 granted patents·10 pending applications·290 citations·filing 2016–2025
98Inventor score
Top patents by PatentIndex Score
72 records- 0197US10361202B2Multigate metal-oxide semiconductor field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 23, 2019·15 cites·19 claims
- 0297US10038093B2FIN field effect transistors having liners between device isolation layers and active areas of the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 31, 2018·25 cites·19 claims
- 0396US10096688B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 9, 2018·16 cites·20 claims
- 0496US9899388B2Integrated circuit device and method of manufacturing the sameKIM KI IL·Filed 2016·Granted Feb 20, 2018·16 cites·25 claims
- 0595US10431583B2Semiconductor device including transistors with adjusted threshold voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 1, 2019·12 cites·15 claims
- 0695US10128240B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·21 cites·20 claims
- 0795US9875938B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 23, 2018·15 cites·20 claims
- 0894US10008575B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 26, 2018·13 cites·20 claims
- 0994US9859393B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 2, 2018·11 cites·20 claims
- 1093US10141312B2Semiconductor devices including insulating materials in finsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 27, 2018·16 cites·18 claims
- 1193US10068904B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 4, 2018·10 cites·13 claims
- 1293US9859392B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 2, 2018·9 cites·20 claims
- 1393US9679978B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 13, 2017·10 cites·20 claims
- 1492US11037926B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 15, 2021·2 cites·20 claims
- 1592US10153277B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 11, 2018·8 cites·14 claims
- 1692US9899416B2Semiconductor device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 20, 2018·9 cites·20 claims
- 1791US10361309B2Semiconductor device having a fin-shaped active region and a gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 23, 2019·5 cites·20 claims
- 1890US10177253B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 8, 2019·6 cites·20 claims
- 1989US10224343B2Semiconductor device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 5, 2019·6 cites·16 claims
- 2089US9853029B2Integrated circuit device and method of manufacturing the sameYOU JUNG-GUN·Filed 2016·Granted Dec 26, 2017·7 cites·19 claims
- 2188US10186615B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 22, 2019·5 cites·20 claims
- 2288US9865736B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 9, 2018·7 cites·18 claims
- 2386US10096714B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 9, 2018·4 cites·18 claims
- 2486US10068901B2Semiconductor device including transistors with different threshold voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 4, 2018·3 cites·20 claims
- 2584US9887080B2Method of forming SiOCN material layer and method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 6, 2018·4 cites·19 claims
- 2684US2025113597A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2783US12225741B2Semiconductor device including source/drain having sidewalls with convex and concave portionsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·19 claims
- 2883US12211846B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jan 28, 2025·0 cites·17 claims
- 2982US9984925B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 29, 2018·4 cites·12 claims
- 3081US10103142B2Integrated circuit (IC) devices including stress inducing layersSUNG SUG HYUN·Filed 2016·Granted Oct 16, 2018·6 cites·20 claims
- 3181US9871042B2Semiconductor device having fin-type patternsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 16, 2018·3 cites·20 claims
- 3280US10461189B2Fin field effect transistors having liners between device isolation layers and active areas of the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 29, 2019·2 cites·20 claims
- 3379US10685957B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 16, 2020·2 cites·12 claims
- 3479US10541127B2Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devicesTAK YONG SUK·Filed 2016·Granted Jan 21, 2020·4 cites·16 claims
- 3579US10128155B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·2 cites·20 claims
- 3679US9991264B1Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 5, 2018·2 cites·20 claims
- 3779US2025151385A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3878US10026736B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 17, 2018·2 cites·14 claims
- 3976US12414364B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·11 claims
- 4076US11728345B2Multi-gate metal-oxide-semiconductor field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 4176US11355492B2Semiconductor device with chamfered upper portions of work function layerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 7, 2022·1 cites·9 claims
- 4274US12015086B2Semiconductor device with a fin-shaped active region and a gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 18, 2024·0 cites·11 claims
- 4373US9865495B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 9, 2018·2 cites·24 claims
- 4473US9728463B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 8, 2017·2 cites·20 claims
- 4570US11908858B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 20, 2024·0 cites·20 claims
- 4669US10763254B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 1, 2020·1 cites·7 claims
- 4768US11521900B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 6, 2022·0 cites·20 claims
- 4866US11069685B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 4965US9711504B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 18, 2017·1 cites·17 claims
- 5064US11038062B2Semiconductor device with a fin-shaped active region and a gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
Showing the top 50 of 72 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →