Inventor · disambiguated record
Gregory N. Burton
Also filed as: BURTON GREGORY N
12 granted patents·243 citations·filing 1985–2016
90Inventor score
Files withHEWLETT PACKARD DEVELOPMENT CO4BURTON GREGORY N2FAIRCHILD SEMICONDUCTOR2BRUCE KEVIN1FAIRCHILD CAMERA INSTR CO1
Top patents by PatentIndex Score
12 records- 0190US5045916AExtended silicide and external contact technologyFAIRCHILD SEMICONDUCTOR·Filed 1989·Granted Sep 3, 1991·77 cites·12 claims
- 0289US4888300ASubmerged wall isolation of silicon islandsFAIRCHILD CAMERA INSTR CO·Filed 1985·Granted Dec 19, 1989·103 cites·13 claims
- 0371US10414162B2Detecting dropletsHEWLETT PACKARD DEVELOPMENT CO·Filed 2016·Granted Sep 17, 2019·1 cites·20 claims
- 0470US9268023B2Drop detectionHEWLETT PACKARD DEVELOPMENT CO·Filed 2012·Granted Feb 23, 2016·5 cites·20 claims
- 0567US5229307AMethod of making extended silicide and external contactNAT SEMICONDUCTOR CORP·Filed 1990·Granted Jul 20, 1993·23 cites·16 claims
- 0660US10272679B2Electrically connecting electrically isolated printhead die ground networks at flexible circuitHEWLETT PACKARD DEVELOPMENT CO·Filed 2016·Granted Apr 30, 2019·0 cites·16 claims
- 0760US8651604B2PrintheadsBURTON GREGORY N·Filed 2007·Granted Feb 18, 2014·2 cites·13 claims
- 0851US10479106B2Drop detectorHEWLETT PACKARD DEVELOPMENT CO·Filed 2016·Granted Nov 19, 2019·0 cites·15 claims
- 0949US9555630B2Electrically connecting electrically isolated printhead die ground networks at flexible circuitBRUCE KEVIN·Filed 2007·Granted Jan 31, 2017·0 cites·16 claims
- 1047US4722908AFabrication of a bipolar transistor with a polysilicon ribbonFAIRCHILD SEMICONDUCTOR·Filed 1986·Granted Feb 2, 1988·16 cites·6 claims
- 1144US5476800AMethod for formation of a buried layer for a semiconductor deviceFiled 1994·Granted Dec 19, 1995·16 cites·6 claims
- 1241US8476742B2Fluid ejection device comprising substrate contact viaBURTON GREGORY N·Filed 2008·Granted Jul 2, 2013·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →