Inventor · disambiguated record
Grayce A. Hickman
Also filed as: HICKMAN GRAYCE A
4 granted patents·361 citations·filing 1990–1992
83Inventor score
Files withEATON CORP4
Top patents by PatentIndex Score
4 records- 0192US5159413AMonolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrateEATON CORP·Filed 1990·Granted Oct 27, 1992·155 cites·11 claims
- 0290US5356831AMethod of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrateEATON CORP·Filed 1992·Granted Oct 18, 1994·117 cites·6 claims
- 0383US5164359AMonolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrateEATON CORP·Filed 1990·Granted Nov 17, 1992·78 cites·10 claims
- 0439US5010036ALow temperature semiconductor bonding process with chemical vapor reactionEATON CORP·Filed 1990·Granted Apr 23, 1991·11 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →