Inventor · disambiguated record
Graham R. Wolstenholme
Also filed as: WOLSTENHOLME GRAHAM · WOLSTENHOLME GRAHAM R · WOLSTENHOLME GRAHAM RICHARD
71 granted patents·7 pending applications·5,638 citations·filing 1992–2025
99Inventor score
Top patents by PatentIndex Score
78 records- 0199US6236059B1Memory cell incorporating a chalcogenide element and method of making sameMICRON TECHNOLOGY INC·Filed 1997·Granted May 22, 2001·727 cites·7 claims
- 0299US6153890AMemory cell incorporating a chalcogenide elementMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 28, 2000·370 cites·7 claims
- 0399US5998244AMemory cell incorporating a chalcogenide element and method of making sameMICRON TECHNOLOGY INC·Filed 1996·Granted Dec 7, 1999·462 cites·19 claims
- 0499US5970336AMethod of making memory cell incorporating a chalcogenide elementMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 19, 1999·439 cites·26 claims
- 0599US5831276AThree-dimensional container diode for use with multi-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 1996·Granted Nov 3, 1998·409 cites·30 claims
- 0699US5751012APolysilicon pillar diode for use in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 1995·Granted May 12, 1998·911 cites·24 claims
- 0798US9941209B2Conductive structures, systems and devices including conductive structures and related methodsMICRON TECHNOLOGY INC·Filed 2016·Granted Apr 10, 2018·54 cites·38 claims
- 0898US6111264ASmall pores defined by a disposable internal spacer for use in chalcogenide memoriesMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 29, 2000·417 cites·28 claims
- 0998US5985698AFabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 16, 1999·327 cites·19 claims
- 1098US5814527AMethod of making small pores defined by a disposable internal spacer for use in chalcogenide memoriesMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 29, 1998·560 cites·38 claims
- 1197US10269626B2Stair step formation using at least two masksMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 23, 2019·12 cites·6 claims
- 1296US8609536B1Stair step formation using at least two masksHA CHANG WAN·Filed 2012·Granted Dec 17, 2013·27 cites·27 claims
- 1396US5397725AMethod of controlling oxide thinning in an EPROM or flash memory arrayNAT SEMICONDUCTOR CORP·Filed 1993·Granted Mar 14, 1995·165 cites·9 claims
- 1495US9786375B2Multiple blocks per string in 3D NAND memoryINTEL CORP·Filed 2015·Granted Oct 10, 2017·17 cites·15 claims
- 1594US9870941B2Stair step formation using at least two masksMICRON TECHNOLOGY INC·Filed 2016·Granted Jan 16, 2018·7 cites·20 claims
- 1694US5422844AMemory array with field oxide islands eliminated and methodNAT SEMICONDUCTOR CORP·Filed 1993·Granted Jun 6, 1995·95 cites·5 claims
- 1793US10290581B2Methods of forming conductive structures including stair step or tiered structures having conductive portionsMICRON TECHNOLOGY INC·Filed 2018·Granted May 14, 2019·6 cites·20 claims
- 1892US9082772B2Stair step formation using at least two masksMICRON TECHNOLOGY INC·Filed 2013·Granted Jul 14, 2015·8 cites·23 claims
- 1992US6787401B2Method of making vertical diode structuresMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 7, 2004·33 cites·23 claims
- 2092US6624022B1Method of forming FLASH memoryMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 23, 2003·41 cites·35 claims
- 2192US6429449B1Three-dimensional container diode for use with multi-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 6, 2002·36 cites·50 claims
- 2291US8508999B2Vertical NAND memoryLIU ZENGTAO·Filed 2012·Granted Aug 13, 2013·14 cites·30 claims
- 2391US6118135AThree-dimensional container diode for use with multi-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 12, 2000·53 cites·60 claims
- 2490US7170103B2Wafer with vertical diode structuresMICRON TECHNOLOGY INC·Filed 2005·Granted Jan 30, 2007·9 cites·7 claims
- 2589US10879175B2Memory devices including stair step or tiered structures and related methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 29, 2020·3 cites·19 claims
- 2689US6653195B1Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 25, 2003·28 cites·42 claims
- 2789US5854102AVertical diode structures with low series resistanceMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 29, 1998·72 cites·19 claims
- 2889US2025038109A1Memory devices including staircase structures, and related electronic systemsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2986US11393716B2Devices including stair step structures, and related apparatuses and memory devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 19, 2022·1 cites·15 claims
- 3086US9508731B2Pillar arrangement in NAND memoryINTEL CORP·Filed 2015·Granted Nov 29, 2016·4 cites·14 claims
- 3184US6808989B2Self-aligned floating gate flash cell system and methodMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 26, 2004·20 cites·33 claims
- 3283US6740552B2Method of making vertical diode structuresMICRON TECHNOLOGY INC·Filed 2002·Granted May 25, 2004·15 cites·20 claims
- 3381US12125786B2Devices including stair step structures, and related memory devices and electronic systemsMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 22, 2024·0 cites·20 claims
- 3481US7569468B2Method for forming a floating gate memory with polysilicon local interconnectsMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 4, 2009·8 cites·23 claims
- 3581US6690051B2FLASH memory circuitryMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 10, 2004·18 cites·10 claims
- 3681US6649968B2Flash memory cellsMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 18, 2003·18 cites·13 claims
- 3780US6750091B1Diode formation methodMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 15, 2004·13 cites·20 claims
- 3879US2025157926A1Memory devices including stadium structures, and related electronic systemsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3977US9553099B2Pillar arrangement in NAND memoryINTEL CORP·Filed 2016·Granted Jan 24, 2017·2 cites·12 claims
- 4075US11430734B2Methods of forming memory devices including stair step structuresMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 30, 2022·0 cites·20 claims
- 4175US7279725B2Vertical diode structuresMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 9, 2007·2 cites·6 claims
- 4275US7262102B2Reduction of field edge thinning in peripheral devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 28, 2007·5 cites·15 claims
- 4375US5319593AMemory array with field oxide islands eliminated and methodNAT SEMICONDUCTOR CORP·Filed 1992·Granted Jun 7, 1994·25 cites·13 claims
- 4473US7473615B2Semiconductor processing methodsMICRON TECHNOLOGY INC·Filed 2005·Granted Jan 6, 2009·4 cites·10 claims
- 4573US6194746B1Vertical diode structures with low series resistanceMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 27, 2001·28 cites·50 claims
- 4672US7115509B2Method for forming polysilicon local interconnectsMICRON TECHNOLOGY INC·Filed 2003·Granted Oct 3, 2006·14 cites·14 claims
- 4770US10381086B2Multiple blocks per string in 3D NAND memoryINTEL CORP·Filed 2017·Granted Aug 13, 2019·2 cites·8 claims
- 4870US8034716B2Semiconductor structures including vertical diode structures and methods for making the sameMICRON TECHNOLOGY INC·Filed 2009·Granted Oct 11, 2011·1 cites·19 claims
- 4970US6759708B2Stacked gate region of a nonvolatile memory cell for a computerMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 6, 2004·8 cites·41 claims
- 5070US6674145B2Flash memory circuitryMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 6, 2004·9 cites·6 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →