Inventor · disambiguated record
Guy Feuillet
Also filed as: FEUILLET GUY
11 granted patents·6 pending applications·33 citations·filing 1993–2021
83Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE14BISOTTO ISABELLE1EN ALTERNATIVES COMMISSARIAT A L EN ATOMIQUE ET AUX1ROBIN IVAN-CHRISTOPHE1
Top patents by PatentIndex Score
17 records- 0183US11139167B2Method making it possible to obtain on a crystalline substrate a semi-polar layer of nitride obtained with at least one of the following materials: gallium (Ga), indium (In) and aluminium (Al)COMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Oct 5, 2021·6 cites·3 claims
- 0282US12080824B2Method for producing an optoelectronic device comprising microLEDsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Sep 3, 2024·1 cites·17 claims
- 0370US10553426B2Method for obtaining a semi-polar nitride layer on a crystalline substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Feb 4, 2020·2 cites·28 claims
- 0460US5349596AAsymmetrical semiconductor heterostructure laser cavity and laser equipped with said cavityCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1993·Granted Sep 20, 1994·23 cites·20 claims
- 0554US7906362B2Assembling two substrates by molecular adhesionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Mar 15, 2011·1 cites·35 claims
- 0649US2024038532A1Method for producing a iii-n material-based layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Application pending·0 cites
- 0745US2009311528A1METHOD FOR PASIVATING NON-RADIATIVE RECOMBINATION CENTRES OF ZnO SPECIMENS AND PASSIVE ZnO SPECIMENS THUS PREPAREDROBIN IVAN-CHRISTOPHE·Filed 2009·Application pending·0 cites
- 0844US12134836B2Method for producing a nitride layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Nov 5, 2024·0 cites·21 claims
- 0944US2024047201A1Method for producing iii-n material-based vertical componentsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Application pending·0 cites
- 1041US12278224B2Method for producing nitride mesas each intended to form an electronic or optoelectronic deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Apr 15, 2025·0 cites·24 claims
- 1139US2008041517A1Assembling Two Substrates by Molecular Adhesion, One of the Two Supporting an Electrically Conductive FilmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Application pending·0 cites
- 1238US12252807B2Process for obtaining a nitride layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Mar 18, 2025·0 cites·20 claims
- 1338US10615299B2Optoelectronic device with three-dimensional semiconductor elementsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Apr 7, 2020·0 cites·12 claims
- 1438US2020203556A1Method of manufacturing optoelectronic structures provided with coplanar light emitting diodesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Application pending·0 cites
- 1536US2013122650A1Method For Preparing P-Type Zinc Oxide ZnO or P-Type ZnMgOEN ALTERNATIVES COMMISSARIAT A L EN ATOMIQUE ET AUX·Filed 2012·Application pending·0 cites
- 1635US10892378B2Method of making a semi-polar nitride layer on a crystalline substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jan 12, 2021·0 cites·18 claims
- 1726US8852997B2Method for removing residual extrinsic impurities in an N type ZnO or ZnMgO substrate, for P-type doping of this substrateBISOTTO ISABELLE·Filed 2011·Granted Oct 7, 2014·0 cites·19 claims
Join the waitlist — get patent alerts
Get an alert when Guy Feuillet files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →