Inventor · disambiguated record
Guangtao Han
Also filed as: HAN GUANGTAO
12 granted patents·3 pending applications·13 citations·filing 2007–2023
83Inventor score
Files withCSMC TECHNOLOGIES FAB1 CO LTD6JOULWATT TECH CO LTD4CSMC TECH CO LTD1CSMC TECHNOLOGIES FAB2 CO LTD1JOULWATT TECH (HANGZHOU) CO LTD1
Top patents by PatentIndex Score
15 records- 0182US9947785B2Junction field effect transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Apr 17, 2018·5 cites·13 claims
- 0275US10290705B2Laterally diffused metal oxide semiconductor field-effect transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB2 CO LTD·Filed 2016·Granted May 14, 2019·3 cites·12 claims
- 0374US9543451B2High voltage junction field effect transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Jan 10, 2017·3 cites·6 claims
- 0469US11901447B2Semiconductor device and manufacturing method thereofJOULWATT TECH CO LTD·Filed 2023·Granted Feb 13, 2024·0 cites·8 claims
- 0562US11652169B2Semiconductor device and manufacturing method thereofJOULWATT TECH CO LTD·Filed 2021·Granted May 16, 2023·0 cites·8 claims
- 0651US11495675B2Manufacture method of lateral double-diffused transistorJOULWATT TECH CO LTD·Filed 2021·Granted Nov 8, 2022·0 cites·15 claims
- 0748US11855229B2Semiconductor structure and method for manufacturing the sameJOULWATT TECH CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·10 claims
- 0847US8411637B2Method for dividing a subcarrier permutation zone and an information configuration systemWU DONGLING·Filed 2007·Granted Apr 2, 2013·2 cites·18 claims
- 0946US12100741B2Lateral double-diffused transistor and manufacturing method thereofJOULWATT TECH HANGZHOU CO LTD·Filed 2020·Granted Sep 24, 2024·0 cites·19 claims
- 1046US9716169B2Lateral double diffused metal oxide semiconductor field-effect transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Jul 25, 2017·0 cites·10 claims
- 1145US9768292B2Laterally diffused metal oxide semiconductor device and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Sep 19, 2017·0 cites·10 claims
- 1235US2013099327A1Cmos devices and method for manufacturing the sameWU HSIAOCHIA·Filed 2011·Application pending·0 cites
- 1331US2018006043A1Preparation method for flat cell rom deviceCSMC TECH CO LTD·Filed 2015·Application pending·0 cites
- 1431US2017186856A1Method for manufacturing ldmos deviceCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Application pending·0 cites
- 1530US9865702B2Method for manufacturing laterally insulated-gate bipolar transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Jan 9, 2018·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →