Inventor · disambiguated record
Guohan Hu
Also filed as: HU GUOHAN
74 granted patents·16 pending applications·386 citations·filing 2003–2024
99Inventor score
Top patents by PatentIndex Score
90 records- 0197US6947235B2Patterned multilevel perpendicular magnetic recording mediaHITACHI GLOBAL STORAGE TECH·Filed 2003·Granted Sep 20, 2005·87 cites·36 claims
- 0296US9391266B1Perpendicular magnetic anisotropy BCC multilayersIBM·Filed 2015·Granted Jul 12, 2016·6 cites·3 claims
- 0395US12364164B2Reactive serial resistance reduction for magnetoresistive random-access memory devicesIBM·Filed 2022·Granted Jul 15, 2025·1 cites·20 claims
- 0495US11501810B2Amorphous spin diffusion layer for modified double magnetic tunnel junction structureIBM·Filed 2021·Granted Nov 15, 2022·2 cites·24 claims
- 0595US9484531B2Perpendicular magnetic anisotropy BCC multilayersIBM·Filed 2015·Granted Nov 1, 2016·5 cites·2 claims
- 0695US8871530B1Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy densityIBM·Filed 2013·Granted Oct 28, 2014·14 cites·5 claims
- 0794US9537090B1Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memoryIBM·Filed 2015·Granted Jan 3, 2017·8 cites·12 claims
- 0894US6865044B1Method for magnetic recording on patterned multilevel perpendicular media using thermal assistance and fixed write currentHITACHI GLOBAL STORAGE TECH·Filed 2003·Granted Mar 8, 2005·52 cites·6 claims
- 0993US6882488B1Method for magnetic recording on patterned multilevel perpendicular media using variable write currentHITACHI GLOBAL STORAGE TECH·Filed 2003·Granted Apr 19, 2005·46 cites·5 claims
- 1092US9978935B2Perpendicular magnetic anisotrophy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memoryIBM·Filed 2016·Granted May 22, 2018·6 cites·19 claims
- 1192US8492859B2Magnetic tunnel junction with spacer layer for spin torque switched MRAMHU GUOHAN·Filed 2011·Granted Jul 23, 2013·17 cites·15 claims
- 1290US11264559B2Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAMIBM·Filed 2019·Granted Mar 1, 2022·3 cites·8 claims
- 1388US10600566B2Method for forming a planar, closed loop magnetic structureIBM·Filed 2016·Granted Mar 24, 2020·2 cites·12 claims
- 1488US8866207B2Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memoryHU GUOHAN·Filed 2012·Granted Oct 21, 2014·10 cites·25 claims
- 1587US8283741B2Optimized free layer for spin torque magnetic random access memoryHU GUOHAN·Filed 2010·Granted Oct 9, 2012·7 cites·20 claims
- 1686US6906879B1Magnetic recording system with patterned multilevel perpendicular magnetic recordingHITACHI GLOBAL STORAGE TECH·Filed 2003·Granted Jun 14, 2005·44 cites·38 claims
- 1784US9472754B2In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctionsIBM·Filed 2016·Granted Oct 18, 2016·3 cites·1 claims
- 1884US9087543B2Spin torque MRAM having perpendicular magnetization with oxide interfaceIBM·Filed 2013·Granted Jul 21, 2015·5 cites·6 claims
- 1983US9799823B1High temperature endurable MTJ stackIBM·Filed 2016·Granted Oct 24, 2017·4 cites·10 claims
- 2082US8406040B2Spin-torque based memory device using a magnesium oxide tunnel barrierWORLEDGE DANIEL C·Filed 2010·Granted Mar 26, 2013·5 cites·21 claims
- 2181US10833253B2Low magnetic moment materials for spin transfer torque magnetoresistive random access memory devicesIBM·Filed 2016·Granted Nov 10, 2020·2 cites·20 claims
- 2281US10361361B2Thin reference layer for STT MRAMIBM·Filed 2016·Granted Jul 23, 2019·3 cites·10 claims
- 2381US9963780B2Growth of metal on a dielectricIBM·Filed 2015·Granted May 8, 2018·1 cites·20 claims
- 2481US9893273B2Light element doped low magnetic moment material spin torque transfer MRAMIBM·Filed 2016·Granted Feb 13, 2018·6 cites·20 claims
- 2581US9620708B2Perpendicular magnetic anisotropy BCC multilayersIBM·Filed 2016·Granted Apr 11, 2017·3 cites·14 claims
- 2679US10916581B2Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAMIBM·Filed 2019·Granted Feb 9, 2021·1 cites·18 claims
- 2779US10468455B2Simplified double magnetic tunnel junctionsIBM·Filed 2016·Granted Nov 5, 2019·4 cites·20 claims
- 2878US10230043B2Boron segregation in magnetic tunnel junctionsIBM·Filed 2017·Granted Mar 12, 2019·2 cites·12 claims
- 2977US10686123B2Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAMIBM·Filed 2018·Granted Jun 16, 2020·1 cites·25 claims
- 3076US2024349620A1Mtj pillar having temperature-independent deltaIBM·Filed 2024·Application pending·0 cites
- 3175US11342115B2Planar solenoid inductors with antiferromagnetic pinned coresIBM·Filed 2019·Granted May 24, 2022·0 cites·20 claims
- 3275US11222746B2Method for forming a planar solenoid inductorIBM·Filed 2019·Granted Jan 11, 2022·0 cites·19 claims
- 3375US8456894B2Noncontact writing of nanometer scale magnetic bits using heat flow induced spin torque effectABRAHAM DAVID W·Filed 2011·Granted Jun 4, 2013·5 cites·24 claims
- 3474US10294561B2Growth of metal on a dielectricIBM·Filed 2018·Granted May 21, 2019·0 cites·20 claims
- 3574US9490422B1Current constriction for spin torque MRAMIBM·Filed 2015·Granted Nov 8, 2016·2 cites·9 claims
- 3673US10256399B2Fabricating a cap layer for a magnetic random access memory (MRAM) deviceIBM·Filed 2016·Granted Apr 9, 2019·2 cites·16 claims
- 3773US9059389B2Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy densityIBM·Filed 2013·Granted Jun 16, 2015·2 cites·4 claims
- 3872US10553781B2In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layersIBM·Filed 2017·Granted Feb 4, 2020·1 cites·19 claims
- 3972US9059399B2Magnetic materials with enhanced perpendicular anisotropy energy density for STT-RAMIBM·Filed 2013·Granted Jun 16, 2015·2 cites·2 claims
- 4070US9647204B2Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayerIBM·Filed 2014·Granted May 9, 2017·3 cites·15 claims
- 4170US8767446B2Multi-bit spin-momentum-transfer magnetoresistence random access memory with single magnetic-tunnel-junction stackHU GUOHAN·Filed 2011·Granted Jul 1, 2014·4 cites·15 claims
- 4269US12464957B2Textured cobalt aluminum/magnesium-aluminum-oxide pedestal for memory devicesIBM·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 4368US11557628B2Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAMIBM·Filed 2020·Granted Jan 17, 2023·0 cites·20 claims
- 4468US10003016B2Perpendicular magnetic anisotropy BCC multilayersIBM·Filed 2017·Granted Jun 19, 2018·0 cites·15 claims
- 4568US9502641B2Double synthetic antiferromagnet using rare earth metals and transition metalsIBM·Filed 2016·Granted Nov 22, 2016·2 cites·1 claims
- 4666US12190925B2Magnetic exchange coupled MTJ free layer having low switching current and high data retentionIBM·Filed 2019·Granted Jan 7, 2025·0 cites·10 claims
- 4766US9799826B2Current constriction for spin torque MRAMIBM·Filed 2016·Granted Oct 24, 2017·0 cites·12 claims
- 4866US9773971B2Perpendicular magnetic anisotropy BCC multilayersIBM·Filed 2016·Granted Sep 26, 2017·0 cites·19 claims
- 4966US8947915B2Thermal spin torqure transfer magnetoresistive random access memoryIBM·Filed 2012·Granted Feb 3, 2015·3 cites·14 claims
- 5064US10580971B2Magnetic domain wall shift register memory devices with high magnetoresistance ratio structuresIBM·Filed 2018·Granted Mar 3, 2020·1 cites·20 claims
Showing the top 50 of 90 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →