Inventor · disambiguated record
Guangyu Huang
Also filed as: HUANG GUANGYU · Huang Guangyu Gavin
36 granted patents·9 pending applications·225 citations·filing 2010–2025
96Inventor score
Files withMICRON TECHNOLOGY INC27INTEL CORP8Intel NDTM US LLC4LODESTAR LICENSING GROUP LLC4GLOBALFOUNDRIES SG PTE LTD1
Top patents by PatentIndex Score
45 records- 0199US9741737B1Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel materialMICRON TECHNOLOGY INC·Filed 2016·Granted Aug 22, 2017·105 cites·8 claims
- 0297US10418379B2Integrated structures comprising channel material extending into source materialMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 17, 2019·12 cites·12 claims
- 0397US9941298B2Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel materialMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 10, 2018·14 cites·8 claims
- 0496US11937423B2Memory array and methods used in forming a memory arrayMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 19, 2024·2 cites·16 claims
- 0596US9412821B2Stacked thin channels for boost and leakage improvementINTEL CORP·Filed 2015·Granted Aug 9, 2016·15 cites·20 claims
- 0695US11569266B2Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel materialMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 31, 2023·2 cites·7 claims
- 0795US9209199B2Stacked thin channels for boost and leakage improvementINTEL CORP·Filed 2014·Granted Dec 8, 2015·25 cites·16 claims
- 0894US10608012B2Memory devices including memory cells and related methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 31, 2020·8 cites·22 claims
- 0994US9761599B2Integrated structures containing vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Sep 12, 2017·9 cites·22 claims
- 1091US9129859B2Three dimensional memory structureINTEL CORP·Filed 2013·Granted Sep 8, 2015·12 cites·10 claims
- 1190US9281318B2Three dimensional memory structureINTEL CORP·Filed 2015·Granted Mar 8, 2016·6 cites·14 claims
- 1289US11018255B2Devices and systems with string drivers including high band gap material and methods of formationMICRON TECHNOLOGY INC·Filed 2018·Granted May 25, 2021·4 cites·24 claims
- 1388US12274056B2Memory array and methods used in forming a memory arrayMICRON TECHNOLOGY INC·Filed 2024·Granted Apr 8, 2025·0 cites·10 claims
- 1488US2024357819A1Integrated Structures Comprising Vertical Channel Material and Having Conductively-Doped Semiconductor Material Directly Against Lower Sidewalls of the Channel Material, and Methods of Forming Integrated StructuresLODESTAR LICENSING GROUP LLC·Filed 2024·Application pending·0 cites
- 1586US10381365B2Integrated structures containing vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 13, 2019·3 cites·5 claims
- 1683US2025364059A1Flash memory having improved performance as a consequence of program direction along a flash storage cell columnIntel NDTM US LLC·Filed 2025·Application pending·0 cites
- 1782US12029039B2Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel materialLODESTAR LICENSING GROUP LLC·Filed 2023·Granted Jul 2, 2024·0 cites·10 claims
- 1881US11430895B2Transistors including oxide semiconductive materials, and related microelectronic devices, memory devices, electronic systems, and methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 30, 2022·1 cites·21 claims
- 1980US10170194B1Asymmetrical multi-gate string driver for memory deviceMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 1, 2019·4 cites·33 claims
- 2079US2025133740A1Multi-gate string drivers having shared pillar structureLODESTAR LICENSING GROUP LLC·Filed 2024·Application pending·0 cites
- 2179US2025159875A1Memory Array and Methods Used in Forming a Memory ArrayMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2275US2025267860A1Apparatus having transistors with raised extension regions and semiconductor finsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2373US10734399B2Multi-gate string drivers having shared pillar structureMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 4, 2020·1 cites·21 claims
- 2471US11309321B2Integrated structures containing vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 19, 2022·0 cites·9 claims
- 2569US12219772B2Multi-gate string drivers having shared pillar structureLODESTAR LICENSING GROUP LLC·Filed 2020·Granted Feb 4, 2025·0 cites·20 claims
- 2669US11527620B2Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor materialMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 13, 2022·0 cites·19 claims
- 2769US11107832B2Apparatuses including memory cells and related methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 31, 2021·0 cites·20 claims
- 2868US10290642B2Flash memory devices incorporating a polydielectric layerINTEL CORP·Filed 2017·Granted May 14, 2019·2 cites·20 claims
- 2968US2021375925A1Apparatuses including memory cells and related methodsMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 3066US11908948B2Memory devices including indium-containing materials, and related electronic systemsMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 20, 2024·0 cites·18 claims
- 3165US11024643B2Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel materialMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 1, 2021·0 cites·17 claims
- 3264US10892268B2Integrated structures containing vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 12, 2021·0 cites·3 claims
- 3363US12484225B2Metal hybrid charge storage structure for memoryIntel NDTM US LLC·Filed 2021·Granted Nov 25, 2025·0 cites·20 claims
- 3463US11380699B2Memory array and methods used in forming a memory arrayMICRON TECHNOLOGY INC·Filed 2019·Granted Jul 5, 2022·0 cites·12 claims
- 3563US2021265499A1Devices and systems with string drivers including high band gap material and methods of formationMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 3660US12310010B2Transistors with raised extension regions and semiconductor finsMICRON TECHNOLOGY INC·Filed 2020·Granted May 20, 2025·0 cites·34 claims
- 3759US11038027B2Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor materialMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 15, 2021·0 cites·37 claims
- 3855US10903219B2Method for making a flash memory deviceINTEL CORP·Filed 2019·Granted Jan 26, 2021·0 cites·11 claims
- 3955US2022084606A1Flash memory having improved performance as a consequence of program direction along a flash storage cell columnINTEL CORP·Filed 2020·Application pending·0 cites
- 4054US9281308B2Method to tune narrow width effect with raised S/D structureGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Mar 8, 2016·0 cites·20 claims
- 4151US12089412B2Vertical string driver with extended gate junction structureIntel NDTM US LLC·Filed 2020·Granted Sep 10, 2024·0 cites·22 claims
- 4248US10777281B2Asymmetrical multi-gate string driver for memory deviceMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 15, 2020·0 cites·20 claims
- 4345US12148802B2Vertical string driver with channel field management structureIntel NDTM US LLC·Filed 2020·Granted Nov 19, 2024·0 cites·17 claims
- 4445US8785287B2Method to tune narrow width effect with raised S/D structureYIN CHUNSHAN·Filed 2010·Granted Jul 22, 2014·0 cites·10 claims
- 4544US2022189987A1Vertical channel with conductive structures to improve string currentINTEL CORP·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →