Inventor · disambiguated record
Guenter Igel
Also filed as: IGEL GUENTER
11 granted patents·184 citations·filing 1996–2000
91Inventor score
Files withMICRONAS INTERMETALL GMBH6MICRONAS GMBH2GEN SEMICONDUCTOR IRELAND1ITT IND GMBH DEUTSCHE1MICRONAS INTERNMETALL GMBH1
Top patents by PatentIndex Score
11 records- 0175US6425289B1Capacitive sensorMICRONAS GMBH·Filed 1999·Granted Jul 30, 2002·38 cites·25 claims
- 0271US6017775AProcess for manufacturing a sensor with a metal electrode in a metal oxide semiconductor (MOS) structureMICRONAS INTERMETALL GMBH·Filed 1997·Granted Jan 25, 2000·37 cites·20 claims
- 0370US5888882AProcess for separating electronic devicesITT IND GMBH DEUTSCHE·Filed 1997·Granted Mar 30, 1999·41 cites·18 claims
- 0455US7166232B2Method for producing a solid body including a microstructureMICRONAS GMBH·Filed 2000·Granted Jan 23, 2007·5 cites·14 claims
- 0553US6127274AProcess for producing electronic devicesMICRONAS INTERMETALL GMBH·Filed 1998·Granted Oct 3, 2000·20 cites·19 claims
- 0647US6204549B1Overvoltage protection deviceMICRONAS INTERMETALL GMBH·Filed 1998·Granted Mar 20, 2001·13 cites·15 claims
- 0743US6370960B1Capacitive sensorMICRONAS INTERNMETALL GMBH·Filed 1999·Granted Apr 16, 2002·13 cites·19 claims
- 0839US5902120AProcess for producing spatially patterned componentsMICRONAS INTERMETALL GMBH·Filed 1998·Granted May 11, 1999·8 cites·17 claims
- 0933US6127268AProcess for fabricating a semiconductor device with a patterned metal layerMICRONAS INTERMETALL GMBH·Filed 1998·Granted Oct 3, 2000·3 cites·13 claims
- 1032US5814874ASemiconductor device having a shorter switching time with low forward voltageGEN SEMICONDUCTOR IRELAND·Filed 1996·Granted Sep 29, 1998·3 cites·18 claims
- 1131US6028009AProcess for fabricating a device with a cavity formed at one end thereofMICRONAS INTERMETALL GMBH·Filed 1998·Granted Feb 22, 2000·3 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →