Inventor · disambiguated record
Guenole Jan
Also filed as: JAN GUENOLE
111 granted patents·6 pending applications·1,173 citations·filing 2010–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD60HEADWAY TECH INC27HEADWAY TECHNOLOGIES INC13JAN GUENOLE8WANG YU-JEN3
Top patents by PatentIndex Score
117 records- 0199US9490054B2Seed layer for multilayer magnetic materialsHEADWAY TECH INC·Filed 2012·Granted Nov 8, 2016·53 cites·13 claims
- 0299US9006704B2Magnetic element with improved out-of-plane anisotropy for spintronic applicationsJAN GUENOLE·Filed 2011·Granted Apr 14, 2015·61 cites·21 claims
- 0399US8987849B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsHEADWAY TECHNOLOGIES INC·Filed 2014·Granted Mar 24, 2015·35 cites·6 claims
- 0499US8860156B2Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAMBEACH ROBERT·Filed 2012·Granted Oct 14, 2014·88 cites·13 claims
- 0599US8852760B2Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layerWANG YU-JEN·Filed 2012·Granted Oct 7, 2014·97 cites·17 claims
- 0699US8592927B2Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applicationsJAN GUENOLE·Filed 2011·Granted Nov 26, 2013·81 cites·21 claims
- 0799US8470462B2Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctionsHORNG CHENG T·Filed 2010·Granted Jun 25, 2013·71 cites·12 claims
- 0898US11417835B2Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·5 cites·20 claims
- 0998US10014465B1Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyHEADWAY TECH INC·Filed 2017·Granted Jul 3, 2018·22 cites·13 claims
- 1098US9966529B1MgO insertion into free layer for magnetic memory applicationsHEADWAY TECH INC·Filed 2017·Granted May 8, 2018·19 cites·13 claims
- 1198US9780299B2Multilayer structure for reducing film roughness in magnetic devicesHEADWAY TECH INC·Filed 2015·Granted Oct 3, 2017·11 cites·19 claims
- 1298US9472752B2High thermal stability reference structure with out-of-plane anisotropy for magnetic device applicationsHEADWAY TECH INC·Filed 2014·Granted Oct 18, 2016·30 cites·10 claims
- 1398US9466789B2Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applicationsHEADWAY TECH INC·Filed 2014·Granted Oct 11, 2016·53 cites·19 claims
- 1498US9373780B2Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applicationsHEADWAY TECHNOLOGIES INC·Filed 2013·Granted Jun 21, 2016·19 cites·7 claims
- 1598US8946834B2High thermal stability free layer with high out-of-plane anisotropy for magnetic device applicationsWANG YU-JEN·Filed 2012·Granted Feb 3, 2015·44 cites·22 claims
- 1698US8541855B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsJAN GUENOLE·Filed 2011·Granted Sep 24, 2013·45 cites·14 claims
- 1797US10957851B2Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·6 cites·20 claims
- 1897US10797225B2Dual magnetic tunnel junction (DMTJ) stack designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·10 cites·33 claims
- 1997US10522752B1Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·10 cites·22 claims
- 2097US8871365B2High thermal stability reference structure with out-of-plane aniotropy to magnetic device applicationsWANG YU-JEN·Filed 2012·Granted Oct 28, 2014·33 cites·19 claims
- 2197US8508006B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsJAN GUENOLE·Filed 2012·Granted Aug 13, 2013·28 cites·13 claims
- 2296US10665773B2Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·7 cites·20 claims
- 2396US10522746B1Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·16 cites·20 claims
- 2496US10193062B2MgO insertion into free layer for magnetic memory applicationsHEADWAY TECH INC·Filed 2018·Granted Jan 29, 2019·7 cites·37 claims
- 2596US9425387B1Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealingHEADWAY TECH INC·Filed 2015·Granted Aug 23, 2016·59 cites·31 claims
- 2695US10868235B2Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·4 cites·20 claims
- 2795US10648069B2Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·5 cites·23 claims
- 2895US9842988B2Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applicationsHEADWAY TECH INC·Filed 2015·Granted Dec 12, 2017·6 cites·11 claims
- 2995US9673385B1Seed layer for growth of <111> magnetic materialsHEADWAY TECH INC·Filed 2016·Granted Jun 6, 2017·7 cites·25 claims
- 3095US9048411B2Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applicationsJAN GUENOLE·Filed 2013·Granted Jun 2, 2015·22 cites·11 claims
- 3195US8921961B2Storage element for STT MRAM applicationsKULA WITOLD·Filed 2012·Granted Dec 30, 2014·26 cites·20 claims
- 3294US10658577B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·3 cites·20 claims
- 3394US9082960B2Fully compensated synthetic antiferromagnet for spintronics applicationsHEADWAY TECHNOLOGIES INC·Filed 2013·Granted Jul 14, 2015·13 cites·25 claims
- 3494US8698260B2Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applicationsJAN GUENOLE·Filed 2012·Granted Apr 15, 2014·18 cites·40 claims
- 3593US10439132B2Protective passivation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 8, 2019·6 cites·20 claims
- 3693US9805816B2Implementation of a one time programmable memory using a MRAM stack designHEADWAY TECH INC·Filed 2016·Granted Oct 31, 2017·15 cites·52 claims
- 3792US10950782B2Nitride diffusion barrier structure for spintronic applicationsHEADWAY TECH INC·Filed 2019·Granted Mar 16, 2021·4 cites·17 claims
- 3892US10763428B2Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 1, 2020·3 cites·17 claims
- 3992US9437268B2Free layer with out-of-plane anisotropy for magnetic device applicationsHEADWAY TECH INC·Filed 2015·Granted Sep 6, 2016·4 cites·8 claims
- 4092US8710603B2Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applicationsJAN GUENOLE·Filed 2012·Granted Apr 29, 2014·13 cites·41 claims
- 4191US10102896B2Adaptive reference scheme for magnetic memory applicationsHEADWAY TECH INC·Filed 2017·Granted Oct 16, 2018·10 cites·20 claims
- 4291US2024381779A1Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment EnhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4390US9252710B2Free layer with out-of-plane anisotropy for magnetic device applicationsHEADWAY TECHNOLOGIES INC·Filed 2012·Granted Feb 2, 2016·11 cites·42 claims
- 4490US8987847B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsHEADWAY TECHNOLOGIES INC·Filed 2014·Granted Mar 24, 2015·5 cites·5 claims
- 4590US8698261B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsMAGIC TECHNOLOGIES INC·Filed 2013·Granted Apr 15, 2014·5 cites·5 claims
- 4689US11696511B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 4, 2023·2 cites·20 claims
- 4788US11264560B2Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applicationsHEADWAY TECH INC·Filed 2019·Granted Mar 1, 2022·3 cites·17 claims
- 4887US10522744B2High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·4 cites·19 claims
- 4987US10115892B2Multilayer structure for reducing film roughness in magnetic devicesHEADWAY TECH INC·Filed 2017·Granted Oct 30, 2018·2 cites·7 claims
- 5086US12213385B2Protective passivation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
Showing the top 50 of 117 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →