Inventor · disambiguated record
Gunho Jo
Also filed as: JO GUNHO
7 granted patents·10 pending applications·2 citations·filing 2021–2025
71Inventor score
Files withSAMSUNG ELECTRONICS CO LTD17
Top patents by PatentIndex Score
17 records- 0192US12356665B2Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 8, 2025·2 cites·18 claims
- 0274US12310106B2Devices including stacked nanosheet transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 20, 2025·0 cites·8 claims
- 0374US2025311304A1Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0464US12463136B2Integrated circuit devices including backside power rail and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·16 claims
- 0561US11843001B2Devices including stacked nanosheet transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·13 claims
- 0657US12490502B2Bipolar junction transistors and P-N junction diodes including stacked nano-semiconductor layersSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 0755US12224314B2Size-controllable multi-stack semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 11, 2025·0 cites·20 claims
- 0854US12255099B2Methods of forming fin-on-nanosheet transistor stacksSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 18, 2025·0 cites·19 claims
- 0952US2024379550A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1051US2023343825A1Boundary gate structure for diffusion break in 3d-stacked semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1150US2023343824A13d-stacked semiconductor device including gate structure formed of polycrystalline silicon or polycrystalline silicon including dopantsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1249US2024170483A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1349US2024321989A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1448US2024274677A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1548US2024178274A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1648US2023352529A13d-stacked semiconductor device having different channel layer intervals at lower nanosheet transistor and upper nanosheet transistorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1744US2024194536A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →