Inventor · disambiguated record
Gunther Lippert
Also filed as: LIPPERT GUNTHER
10 granted patents·3 pending applications·75 citations·filing 2001–2018
86Inventor score
Files withIHP GMBH3LIPPERT GUNTHER3INFINEON TECHNOLOGIES AG2IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ—INSTITUT FÜR INNOVA1MEHR WOLFGANG1
Top patents by PatentIndex Score
13 records- 0189US10134848B2Semiconductor device having a graphene layer, and method of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 20, 2018·5 cites·21 claims
- 0285US6750484B2Silicon germanium hetero bipolar transistorNOKIA CORP·Filed 2002·Granted Jun 15, 2004·36 cites·15 claims
- 0379US8778782B2Fabrication of graphene electronic devices using step surface contourLIPPERT GUNTHER·Filed 2011·Granted Jul 15, 2014·8 cites·15 claims
- 0466US7019341B2Silicon germanium hetero bipolar transistor having a germanium concentration profile in the base layerIHP GMBH·Filed 2002·Granted Mar 28, 2006·13 cites·16 claims
- 0566US6800881B2Silicon-germanium hetero bipolar transistor with T-shaped implantation layer between emitter and emitter contact areaIHP GMBH·Filed 2002·Granted Oct 5, 2004·11 cites·16 claims
- 0660US8957404B2P-type graphene base transistorIHP GMBH·Filed 2012·Granted Feb 17, 2015·2 cites·16 claims
- 0758US10347723B2Method of manufacturing a semiconductor device having graphene materialINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jul 9, 2019·0 cites·20 claims
- 0840US9040956B2Unipolar heterojunction depletion-layer transistorMEHR WOLFGANG·Filed 2009·Granted May 26, 2015·0 cites·18 claims
- 0933US8227888B2Semiconductor component with countersignal circuit for preventing crosstalk between electronic assembliesLIPPERT GUNTHER·Filed 2005·Granted Jul 24, 2012·0 cites·23 claims
- 1031US2002125479A1MOSFET and method of its fabricationFiled 2001·Application pending·0 cites
- 1129US9590045B2Graphene base transistor and method for making the sameIHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ—INSTITUT FÜR INNOVA·Filed 2014·Granted Mar 7, 2017·0 cites·17 claims
- 1226US2006286734A1MIM/MIS structure with praseodymium titanate or praseodymium oxide as insulator materialMICROELECTRONICS INST FUR INNO·Filed 2006·Application pending·0 cites
- 1325US2012032150A1Semiconductor component, method of producing a semiconductor component, semiconductor deviceLIPPERT GUNTHER·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →