Inventor · disambiguated record
Gulbagh Singh
Also filed as: SINGH GULBAGH
47 granted patents·11 pending applications·64 citations·filing 2017–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD58
Top patents by PatentIndex Score
58 records- 0197US11462642B2Source/drain epitaxial layer profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·3 cites·20 claims
- 0297US11367778B2MOSFET device structure with air-gaps in spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 21, 2022·4 cites·20 claims
- 0397US11335638B2Reducing RC delay in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 17, 2022·5 cites·20 claims
- 0496US12027581B2Semiconductor device with air-void in spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
- 0595US11211283B2Method for forming a bulk semiconductor substrate configured to exhibit soi behaviorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·3 cites·20 claims
- 0695US10790391B2Source/drain epitaxial layer profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 29, 2020·7 cites·20 claims
- 0794US11887987B2Semiconductor wafer with devices having different top layer thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 0894US11817345B2Multiple thickness semiconductor-on-insulator field effect transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·2 cites·20 claims
- 0994US10546937B2Structures and methods for noise isolation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 28, 2020·8 cites·20 claims
- 1093US11942547B2Source/drain epitaxial layer profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·1 cites·20 claims
- 1192US10748911B2Integrated circuit for low power SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·7 cites·20 claims
- 1291US11804439B2Reducing RC delay in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·1 cites·20 claims
- 1390US11404537B2Semiconductor device with air-void in spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·20 claims
- 1490US2025351530A1Mosfet device structure with air-gaps in spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1588US11935895B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·1 cites·12 claims
- 1687US10672795B2Bulk semiconductor substrate configured to exhibit semiconductor-on-insulator behaviorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·4 cites·20 claims
- 1787US10163831B2Semiconductor device with post passivation structure and fabrication method thereforTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·4 cites·20 claims
- 1885US12446289B2MOSFET device structure with air-gaps in spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 1984US11476157B2Method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) having low off-state capacitance due to reduction of off-state capacitance of back-end-of-line (BEOL) features of the MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 18, 2022·1 cites·8 claims
- 2083US12381166B2Method of making semiconductor structure including buffer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 2183US12302637B2Semiconductor wafer with devices having different top layer thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 2283US11417749B2Semiconductor arrangement with airgap and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 16, 2022·2 cites·20 claims
- 2383US2024379563A1Reducing rc delay in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2483US2025324725A1Semiconductor arrangement with airgap and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2582US12230574B2Reducing RC delay in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 2681US10734489B2Method for forming semiconductor device structure with metal silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·2 cites·20 claims
- 2781US2025248118A1Semiconductor wafer with devices having different top layer thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2880US2024349475A1Integrated circuit structure for low power sramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2980US2025126833A1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3080US2025351358A1Memory device with improved data retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3180US2025096038A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3279US10886165B2Method of forming negatively sloped isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 5, 2021·2 cites·20 claims
- 3378US12199181B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 3478US11855170B2MOSFET device structure with air-gaps in spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3578US2024321954A1Semiconductor device with air-void in spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3676US12402389B2Semiconductor arrangement with airgap and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 3776US11810879B2Semiconductor structure including buffer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
- 3875US12191196B2Method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) having low off-state capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 3975US12052851B2Integrated circuit structure for low power SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 4073US11855137B2SOI device structure for robust isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·9 claims
- 4173US11183570B2Structures and methods for noise isolation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·1 cites·20 claims
- 4273US2023387197A1Novel soi device structure for robust isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4373US2024203998A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4471US12183793B2Method for forming semiconductor device structure with metal-semiconductor compound layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·20 claims
- 4571US11309268B2Method of designing a layout, method of making a semiconductor structure and semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·20 claims
- 4668US11348944B2Semiconductor wafer with devices having different top layer thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 4768US11257902B2SOI device structure for robust isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·19 claims
- 4867US12211934B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 28, 2025·0 cites·20 claims
- 4967US11101354B2Method for forming semiconductor device structure with metal silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 24, 2021·0 cites·19 claims
- 5065US11462550B2SRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·20 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →