Inventor · disambiguated record
Guan-Ren Wang
Also filed as: WANG GUAN · WANG GUAN-REN
30 granted patents·17 pending applications·21 citations·filing 2010–2025
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD39HANERGY NEW MATERIAL TECH CO LTD3GONG SHUN TECHNOLOGY CO LTD2WINTEK CORP2TAIWAN TAIWAN SEMICONDUCTOR MFG COMPANY LTD1
Top patents by PatentIndex Score
47 records- 0198US11355637B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·5 cites·20 claims
- 0297US11854814B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0396US12009429B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·2 cites·20 claims
- 0496US11784222B2Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·2 cites·20 claims
- 0595US12148622B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·1 cites·20 claims
- 0695US11380794B2Fin field-effect transistor device having contact plugs with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·3 cites·20 claims
- 0785US12310051B2Fin field-effect transistor device having contact plugs with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 0885US2025120113A1Field effect transistor device with air gap spacer in source/drain contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0984US12382654B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 1084US12125879B2Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 1184US11398385B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·1 cites·20 claims
- 1284US2024379762A1Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1384US2025267889A1Fin field-effect transistor device having contact plugs with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1484US2024371645A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1583US12336236B2Semiconductor device isolation featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1683US12211937B2Field effect transistor device with air gap spacer in source/drain contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 1782US12293947B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 6, 2025·0 cites·20 claims
- 1882US11355399B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·1 cites·20 claims
- 1981US10553492B2Selective NFET/PFET recess of source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 4, 2020·2 cites·20 claims
- 2081US2025261437A1Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2180US11757010B2Multi-stage etching process for contact formation in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·1 cites·20 claims
- 2280US11715777B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 1, 2023·1 cites·20 claims
- 2380US2024395556A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2479US11916147B2Fin field-effect transistor device having contact plugs with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 2577US11735667B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 2676US12119231B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 15, 2024·0 cites·20 claims
- 2776US11842930B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·0 cites·20 claims
- 2876US2025336883A1Apparatus and bonding process for wafer bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2975US11935920B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 3072US12501679B2Interconnect structures for semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·18 claims
- 3172US2025246575A1Apparatus and Bonding Process for Wafer BondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3269US11888064B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 30, 2024·0 cites·20 claims
- 3368US11545546B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 3468US11515165B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·0 cites·20 claims
- 3567US11222951B2Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 11, 2022·0 cites·20 claims
- 3666US2022359693A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3763US11139211B2Selective NFET/PFET recess of source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 5, 2021·0 cites·20 claims
- 3857US11532712B2Interconnect structures for semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 3955US2023378283A1Multi-stage etching process for contact formation in a semiconductor deviceTAIWAN TAIWAN SEMICONDUCTOR MFG COMPANY LTD·Filed 2023·Application pending·0 cites
- 4054US12495598B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 4140US2014192295A1Method of forming a liquid crystal alignment layer, method of manufacturing a display panel, and a display panelWINTEK CORP·Filed 2014·Application pending·0 cites
- 4237US2011098145A1Tension regulator applied to a timing beltGONG SHUN TECHNOLOGY CO LTD·Filed 2010·Application pending·0 cites
- 4337US2011269585A1Tension regulator with a pressure vessel applied to a timing beltGONG SHUN TECHNOLOGY CO LTD·Filed 2010·Application pending·0 cites
- 4437US2015077687A1Liquid crystal display deviceWINTEK CORP·Filed 2014·Application pending·0 cites
- 4530US2019010578A1Method for recycling copper indium gallium selenium materialsHANERGY NEW MATERIAL TECH CO LTD·Filed 2016·Application pending·0 cites
- 4627US2020277685A1Recovery method for copper-indium-gallium-selenium materialHANERGY NEW MATERIAL TECH CO LTD·Filed 2016·Application pending·0 cites
- 4727US2020270724A1Method for recycling copper indium gallium selenium materialsHANERGY NEW MATERIAL TECH CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →