Inventor · disambiguated record
Guanping Wu
Also filed as: WU GUANPING
29 granted patents·4 pending applications·105 citations·filing 2011–2025
95Inventor score
Files withYANGTZE MEMORY TECH CO LTD24SEMICONDUCTOR MFG INT SHANGHAI3ZHANG CHAO3SEMICONDUCTOR MFG INT CORP2SEMICONDUCTOR MFG INT SHANGHAI CORP1
Top patents by PatentIndex Score
33 records- 0198US11785776B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 10, 2023·6 cites·20 claims
- 0298US10553604B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Feb 4, 2020·31 cites·20 claims
- 0397US11758732B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Sep 12, 2023·3 cites·20 claims
- 0497US11527547B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 13, 2022·3 cites·20 claims
- 0597US10923491B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 16, 2021·4 cites·20 claims
- 0697US10593690B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 17, 2020·21 cites·20 claims
- 0793US11956953B2Joint opening structures of three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Apr 9, 2024·1 cites·20 claims
- 0892US10910397B2Through array contact structure of three- dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Feb 2, 2021·5 cites·20 claims
- 0989US11410983B2Three-dimensional memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 9, 2022·2 cites·16 claims
- 1088US2025024683A1Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1187US8476085B1Method of fabricating dual trench isolated epitaxial diode arrayZHANG CHAO·Filed 2011·Granted Jul 2, 2013·14 cites·13 claims
- 1287US2025311214A1Semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1387US2024407172A1Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1486US11545505B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 3, 2023·1 cites·20 claims
- 1584US12185550B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 1684US12137568B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
- 1784US10790297B2Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layerYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Sep 29, 2020·4 cites·20 claims
- 1883US2024188291A1Semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1982US10886291B2Joint opening structures of three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jan 5, 2021·2 cites·20 claims
- 2073US11482532B2Joint opening structures of three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 25, 2022·0 cites·20 claims
- 2173US10541249B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jan 21, 2020·2 cites·20 claims
- 2270US10867983B2Three-dimensional memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 15, 2020·1 cites·14 claims
- 2370US9006022B2Method for fabricating phase change memorySEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Apr 14, 2015·2 cites·20 claims
- 2468US11728326B2Three-dimensional memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 15, 2023·0 cites·20 claims
- 2563US9023710B2Semiconductor memory device and manufacturing method thereofSEMICONDUCTOR MFG INT CORP·Filed 2012·Granted May 5, 2015·1 cites·11 claims
- 2661US8586405B2Semiconductor device manufacturing methodZHANG CHAO·Filed 2012·Granted Nov 19, 2013·1 cites·16 claims
- 2760US11437400B2Three-dimensional memory device and fabricating method thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·10 claims
- 2858US9334583B2Method of preventing auto-doping during epitaxial layer growth by cleaning the reaction chamber with hydrogen chlorideZHANG CHAO·Filed 2011·Granted May 10, 2016·1 cites·10 claims
- 2953US10797067B2Three-dimensional memory device and fabricating method thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Oct 6, 2020·0 cites·10 claims
- 3046US9373784B2Semiconductor memory device and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted Jun 21, 2016·0 cites·20 claims
- 3144US9589837B2Electrode manufacturing method, fuse device and manufacturing method thereforSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2013·Granted Mar 7, 2017·0 cites·11 claims
- 3244US9136469B2Phase change memoriesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted Sep 15, 2015·0 cites·20 claims
- 3336US8912039B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR MFG INT CORP·Filed 2012·Granted Dec 16, 2014·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →