Inventor · disambiguated record
Guozhong Xing
Also filed as: XING GUOZHONG
9 granted patents·7 pending applications·0 citations·filing 2020–2022
72Inventor score
Files withINST OF MICROELECTRONICS CAS12INST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES4
Top patents by PatentIndex Score
16 records- 0155US12453292B2All-electrically-controlled spintronic neuron device, neuron circuit and neural networkINST OF MICROELECTRONICS CAS·Filed 2021·Granted Oct 21, 2025·0 cites·12 claims
- 0254US2024232592A1Reconfigurable neuron device based on ion gate regulation and method of preparing the sameINST OF MICROELECTRONICS CAS·Filed 2022·Application pending·0 cites
- 0353US11790968B2Spintronic device, SOT-MRAM storage cell, storage array and in-memory computing circuitINST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES·Filed 2020·Granted Oct 17, 2023·0 cites·14 claims
- 0451US12160529B2Reconfigurable PUF device based on fully electric field-controlled domain wall motionINST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES·Filed 2022·Granted Dec 3, 2024·0 cites·8 claims
- 0551US2024334838A1Sot-mram memory cell, memory array, memory, and operation methodINST OF MICROELECTRONICS CAS·Filed 2022·Application pending·0 cites
- 0648US2025089577A1Memory cell and method of manufacturing the same, memory, and method of storing informationINST OF MICROELECTRONICS CAS·Filed 2022·Application pending·0 cites
- 0747US2023276637A1Spin orbit torque magnetic random access memory cell, memory array, and memoryINST OF MICROELECTRONICS CAS·Filed 2020·Application pending·0 cites
- 0847US2025204264A1Skyrmion transistor and method of controlling skyrmion transistorINST OF MICROELECTRONICS CAS·Filed 2022·Application pending·0 cites
- 0943US12154609B2In-memory computing using SOT-MRAMINST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES·Filed 2022·Granted Nov 26, 2024·0 cites·8 claims
- 1043US2023280978A1Spin orbit torque magnetic random access memory cell, spin orbit torque magnetic random access memory array, and method for calculating hamming distanceINST OF MICROELECTRONICS CAS·Filed 2021·Application pending·0 cites
- 1143US2024122075A1Activation function generator based on magnetic domain wall driven magnetic tunnel junction and manufacturing methodINST OF MICROELECTRONICS CAS·Filed 2021·Application pending·0 cites
- 1240US12293781B2Three-state spintronic device, memory cell, memory array and read-write circuitINST OF MICROELECTRONICS CAS·Filed 2021·Granted May 6, 2025·0 cites·10 claims
- 1339US12387774B2Spintronic device, memory cell, memory array and read and write circuitINST OF MICROELECTRONICS CAS·Filed 2021·Granted Aug 12, 2025·0 cites·6 claims
- 1437US12431175B2Self-reference storage structure and in-memory computing circuitINST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES·Filed 2021·Granted Sep 30, 2025·0 cites·8 claims
- 1537US12336188B2Two-dimensional material-based selector with stack unit, memory unit, array, and method of operating the sameINST OF MICROELECTRONICS CAS·Filed 2020·Granted Jun 17, 2025·0 cites·14 claims
- 1636US12477960B2Memristor, method of calculating hamming distance, and in-memory computing integration applicationINST OF MICROELECTRONICS CAS·Filed 2021·Granted Nov 18, 2025·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →