Inventor · disambiguated record
Guangjun Yang
Also filed as: YANG GUANGJUN
39 granted patents·4 pending applications·65 citations·filing 2012–2023
95Inventor score
Files withMICRON TECHNOLOGY INC24SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP13YANG GUANGJUN4GRACE SEMICONDUCTOR MFG CORP2
Top patents by PatentIndex Score
43 records- 0197US11239242B2Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 1, 2022·5 cites·31 claims
- 0297US9754946B1Methods of forming an elevationally extending conductor laterally between a pair of conductive linesMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 5, 2017·30 cites·25 claims
- 0391US10546862B1Integrated assemblies having spacers of low permittivity along digit-lines, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 28, 2020·8 cites·31 claims
- 0490US10418275B1Methods of sealing openings, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 17, 2019·4 cites·16 claims
- 0585US9640252B1Method of operating flash memory unitSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2016·Granted May 2, 2017·7 cites·14 claims
- 0683US11393688B2Semiconductor contact formationMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 19, 2022·1 cites·20 claims
- 0783US10290534B1Methods of sealing openings, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2018·Granted May 14, 2019·2 cites·32 claims
- 0881US10347643B1Methods of forming integrated assemblies having dielectric regions along conductive structuresMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 9, 2019·2 cites·20 claims
- 0980US12363888B2Memory circuitry and method used in forming memory circuitryMICRON TECHNOLOGY INC·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 1076US10707215B2Methods of forming semiconductor devices, and related semiconductor devices, memory devices, and electronic systemsMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 7, 2020·2 cites·12 claims
- 1168US11785762B2Memory circuitry and method used in forming memory circuitryMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 10, 2023·0 cites·13 claims
- 1265US10790185B2Methods of sealing openings, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 29, 2020·0 cites·21 claims
- 1365US9082486B2Row decoding circuit and memoryGRACE SEMICONDUCTOR MFG CORP·Filed 2013·Granted Jul 14, 2015·3 cites·20 claims
- 1463US10700073B2Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 30, 2020·0 cites·17 claims
- 1558US11239240B2Methods of forming a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 1655US2024064972A1Memory device including structures in memory array region and periperal circuitry regionMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 1754US10978295B2Epitaxial growth on semiconductor structuresMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 13, 2021·0 cites·20 claims
- 1853US10665665B2Passivation material for a pillar adjacent a trenchMICRON TECHNOLOGY INC·Filed 2018·Granted May 26, 2020·0 cites·25 claims
- 1952US11563008B2Integrated memory with redistribution of capacitor connections, and methods of forming integrated memoryMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 24, 2023·0 cites·25 claims
- 2052US9105587B2Methods of forming semiconductor structures with sulfur dioxide etch chemistriesMICRON TECHNOLOGY INC·Filed 2012·Granted Aug 11, 2015·0 cites·24 claims
- 2151US10134741B2Methods of forming an elevationally extending conductor laterally between a pair of conductive linesMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 20, 2018·0 cites·21 claims
- 2250US11502085B2Integrated memory with redistribution of capacitor connections, and methods of forming integrated memoryMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
- 2350US8942044B2Flash memory deviceYANG GUANGJUN·Filed 2012·Granted Jan 27, 2015·1 cites·6 claims
- 2449US11476255B2Method used in forming an array of vertical transistors and method used in forming an array of memory cells individually comprising a vertical transistor and a storage device above the vertical transistorMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 18, 2022·0 cites·28 claims
- 2548US10957549B2Methods of forming semiconductor devices using mask materials, and related semiconductor devices and systemsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 23, 2021·0 cites·23 claims
- 2647US9013230B2Charge pump circuitSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2013·Granted Apr 21, 2015·0 cites·5 claims
- 2746US2015307778A1Sulfur dioxide etch chemistriesMICRON TECHNOLOGY INC·Filed 2015·Application pending·0 cites
- 2845US11114937B2Charge pump circuitSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2020·Granted Sep 7, 2021·0 cites·15 claims
- 2944US11450387B2Method of controlling internal address for a serial nor flash memorySHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2021·Granted Sep 20, 2022·0 cites·5 claims
- 3044US10957399B2Memory and operation method thereofSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2019·Granted Mar 23, 2021·0 cites·13 claims
- 3144US2015194321A1Methods of Processing Polysilicon-Comprising CompositionsMICRON TECHNOLOGY INC·Filed 2014·Application pending·0 cites
- 3242US9406685B2Flash memory unit and memory array, and programming, erasing and reading method thereofSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2014·Granted Aug 2, 2016·0 cites·7 claims
- 3342US9153322B2Memory array device and method for reducing read current of the sameGRACE SEMICONDUCTOR MFG CORP·Filed 2013·Granted Oct 6, 2015·0 cites·9 claims
- 3441US9337723B2Charge pump system and memorySHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2014·Granted May 10, 2016·0 cites·10 claims
- 3540US9525340B1Boost capacitor circuit and charge pumpSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2015·Granted Dec 20, 2016·0 cites·14 claims
- 3639US9276001B2Semiconductor device and method for manufacturing the sameYANG GUANGJUN·Filed 2012·Granted Mar 1, 2016·0 cites·12 claims
- 3738US9030891B2Charge pump circuit and memorySHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2013·Granted May 12, 2015·0 cites·10 claims
- 3837US2015194193A1Memory and reading method thereof, and circuit for reading memorySHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2014·Application pending·0 cites
- 3936US9396801B1Memory, and erasing method, programming method and reading method thereofSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2015·Granted Jul 19, 2016·0 cites·10 claims
- 4035US10319448B2Circuits and methods of reference-current generation for flashSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2017·Granted Jun 11, 2019·0 cites·14 claims
- 4134US9520202B1Programming verification control circuit and method for control thereofSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2015·Granted Dec 13, 2016·0 cites·11 claims
- 4234US8755231B2Flash memoryYANG GUANGJUN·Filed 2012·Granted Jun 17, 2014·0 cites·2 claims
- 4326US9202582B1Flash-memory low-speed read mode control circuitYANG GUANGJUN·Filed 2014·Granted Dec 1, 2015·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →