Inventor · disambiguated record
Gwangguk An
Also filed as: AN GWANGGUK
3 granted patents·1 citations·filing 2015–2020
47Inventor score
Top patents by PatentIndex Score
3 records- 0179US11616197B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 28, 2023·1 cites·18 claims
- 0238US9935262B2Magnetic tunnel junction element and manufacturing method thereforUNIV HANYANG IND UNIV COOP FOUND·Filed 2015·Granted Apr 3, 2018·0 cites·5 claims
- 0333US10559745B2Magnetic tunnel junction (MTJ) structure with perpendicular magnetic anisotropy (PMA) having an oxide-based PMA-inducing layer and magnetic element including the sameUNIV HANYANG IND UNIV COOP FOUND·Filed 2017·Granted Feb 11, 2020·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →