Inventor · disambiguated record
Gyuseong Kang
Also filed as: KANG GYUSEONG
6 granted patents·7 pending applications·2 citations·filing 2019–2025
66Inventor score
Top patents by PatentIndex Score
13 records- 0186US12051456B2Memory devices and operation methods thereof including a write voltage selectively applied to a well of a column multiplexer circuitSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 30, 2024·2 cites·19 claims
- 0250US2025299717A1Resistive memory device and writing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0349US12068015B2Memory device including merged write driverSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 0449US2025014619A1Gate driver circuit and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0546US11048431B2Flip-flop based on nonvolatile memory and backup operation method thereofUNIV KOREA RES & BUS FOUND·Filed 2020·Granted Jun 29, 2021·0 cites·16 claims
- 0646US2025329365A1Memory device which has optimal reference resistance value according to i/o unitSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0746US2025299715A1Resistive memory device capable of increasing memory capacitySAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0845US12040005B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 0945US2025298693A1Error correction code circuit, memory system including the same, and method of error correction for memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1045US2025299759A1Storage device including redundancy memory cell and repair method of fail memory cell included in storage deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1142US11908503B2Nonvolatile memory devices having enhanced write drivers thereinSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 1241US2025166685A1Read offset compensator for adjusting reference resistance using coarse offset reference resistance and fine offset reference resistance, and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1340US10636467B2SOT-MRAM and method for writing data thereofUNIV KOREA RES & BUS FOUND·Filed 2019·Granted Apr 28, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →