Inventor · disambiguated record
H. James Fulford
Also filed as: FULFORD H JAMES · FULFORD H JIM · FULFORD JIM · FULFORD JIM H
10 granted patents·214 citations·filing 1997–1998
91Inventor score
Files withADVANCED MICRO DEVICES INC10
Top patents by PatentIndex Score
10 records- 0184US6207485B1Integration of high K spacers for dual gate oxide channel fabrication techniqueADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 27, 2001·58 cites·8 claims
- 0281US6054374AMethod of scaling dielectric thickness in a semiconductor process with ion implantationADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 25, 2000·51 cites·7 claims
- 0368US6127235AMethod for making asymmetrical gate oxide thickness in channel MOSFET regionADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 3, 2000·26 cites·18 claims
- 0460US5977600AFormation of shortage protection regionADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 2, 1999·19 cites·13 claims
- 0557US6743688B1High performance MOSFET with modulated channel gate thicknessADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 1, 2004·16 cites·10 claims
- 0655US6258675B1High K gate electrodeADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 10, 2001·15 cites·26 claims
- 0752US6040602AFormation of lightly doped regions under a gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 21, 2000·13 cites·10 claims
- 0839US6767794B2Method of making ultra thin oxide formation using selective etchback technique integrated with thin nitride layer for high performance MOSFETADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 27, 2004·7 cites·7 claims
- 0936US6060733AFormation of lightly doped regions under a gate having a reduced gate oxideADVANCED MICRO DEVICES INC·Filed 1997·Granted May 9, 2000·5 cites·18 claims
- 1033US6124175ARapid thermal anneal with a gaseous dopant speciesADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 26, 2000·4 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →