Inventor · disambiguated record

Hai-Ching Chen

Also filed as: CHEN HAI C · CHEN HAI-CHING

184 granted patents·51 pending applications·599 citations·filing 1987–2025

99Inventor score

Technology areasH10W H10P H10D G02B C23C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD197 TAIWAN SEMICONDUCTOR MFG20 CHEN HAI C3 LO CHING-YU3 YU CHEN-HUA3

Top patents by PatentIndex Score

235 records

0198US11527649B1Ferroelectric field effect transistor devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·9 cites·20 claims
0298US11251073B2Selective deposition of barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·5 cites·20 claims
0398US9134633B2System and method for dark field inspectionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 15, 2015·63 cites·20 claims
0497US11908792B2Semiconductor device comprising cap layer over dielectric layer and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·3 cites·20 claims
0597US11810815B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·3 cites·20 claims
0697US11508755B2Stacked ferroelectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 22, 2022·4 cites·20 claims
0797US11322395B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·4 cites·20 claims
0897US9773676B2Lithography using high selectivity spacers for pitch reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 26, 2017·17 cites·19 claims
0997US9659864B2Method and apparatus for forming self-aligned via with selectively deposited etching stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·24 cites·20 claims
1097US9177797B2Lithography using high selectivity spacers for pitch reductionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 3, 2015·28 cites·20 claims
1196US11818896B2Cocktail layer over gate dielectric layer of FET FeRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·2 cites·20 claims
1296US11355430B2Capping layer overlying dielectric structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·4 cites·20 claims
1396US9041015B2Package structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 26, 2015·17 cites·21 claims
1495US12089415B2Metal layers for increasing polarization of ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·2 cites·20 claims
1595US9941157B2Porogen bonded gap filling material in semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 10, 2018·9 cites·20 claims
1695US9036956B2Method of fabricating a polymer waveguideTSENG CHUN-HAO·Filed 2012·Granted May 19, 2015·31 cites·20 claims
1794US12512403B2Method of forming semiconductor device comprising conductive feature, dielectric layer adjacent conductive feature, and etch stop layer on top surface of dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 30, 2025·1 cites·20 claims
1894US12176246B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·1 cites·20 claims
1994US10014175B2Lithography using high selectivity spacers for pitch reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 3, 2018·7 cites·20 claims
2094US8729703B2Schemes for forming barrier layers for copper in interconnect structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 20, 2014·9 cites·20 claims
2194US8440564B2Schemes for forming barrier layers for copper in interconnect structuresYU CHEN-HUA·Filed 2012·Granted May 14, 2013·9 cites·20 claims
2293US12094935B2Method of selective film deposition and semiconductor feature made by the methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·1 cites·20 claims
2393US9922927B2Method and apparatus for forming self-aligned via with selectively deposited etching stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 20, 2018·6 cites·20 claims
2492US11189560B2Semiconductor device comprising etch stop layer over dielectric layer and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 30, 2021·6 cites·20 claims
2592US10211097B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 19, 2019·7 cites·7 claims
2692US9818690B2Self-aligned interconnection structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 14, 2017·9 cites·20 claims
2792US9335473B2Package structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 10, 2016·7 cites·20 claims
2892US8976833B2Light coupling device and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 10, 2015·11 cites·20 claims
2991US11222843B2Interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 11, 2022·5 cites·20 claims
3091US11004740B2Structure and method for interconnection with self-alignmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·6 cites·20 claims
3190US11990400B2Capping layer overlying dielectric structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·1 cites·20 claims
3290US9405063B2Integrated metal gratingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 2, 2016·6 cites·20 claims
3390US9230911B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·9 cites·20 claims
3490US2025359186A1Thin film transistor including a compositionally-modulated active region and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3589US12009301B2Interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·1 cites·20 claims
3689US11948834B2Selective deposition of barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·1 cites·20 claims
3789US10008382B2Semiconductor device having a porous low-k structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 26, 2018·5 cites·20 claims
3889US8264066B2Liner formation in 3DIC structuresLO CHING-YU·Filed 2009·Granted Sep 11, 2012·14 cites·13 claims
3989US8232201B2Schemes for forming barrier layers for copper in interconnect structuresYU CHEN-HUA·Filed 2011·Granted Jul 31, 2012·5 cites·20 claims
4088US9129968B2Schemes for forming barrier layers for copper in interconnect structuresTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 8, 2015·4 cites·20 claims
4188US7964496B2Schemes for forming barrier layers for copper in interconnect structuresTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 21, 2011·7 cites·10 claims
4288US2025318198A1Thin film transistor including a compositionally-graded gate dielectric and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4387US11903217B2Ferroelectric memory device with a metal layer having a crystal orientation for improving ferroelectric polarization and method for forming the ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·1 cites·20 claims
4487US10930551B2Methods for fabricating a low-resistance interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·3 cites·20 claims
4587US10867850B2Selective deposition method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·5 cites·20 claims
4687US2024412975A1Method and structure for semiconductor device having gate spacer protection layerPARABELLUM STRATEGIC OPPORTUNITIES FUND LLC·Filed 2024·Application pending·0 cites
4786US11769815B2Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·1 cites·20 claims
4886US9484211B2Etchant and etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 1, 2016·5 cites·20 claims
4985US9478939B2Light coupling device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 25, 2016·4 cites·20 claims
5084US12482743B2Interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 25, 2025·0 cites·20 claims

Showing the top 50 of 235 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →