Inventor · disambiguated record

Han-Jong Chia

Also filed as: CHIA HAN-JONG

158 granted patents·61 pending applications·239 citations·filing 2016–2025

99Inventor score

Technology areasH10D H10W H10B H10P G11C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD200 EVERSPIN TECHNOLOGIES INC18 TAIWAN SEMICONDUCTOR MANUFACTURIING CO LTD1

Top patents by PatentIndex Score

219 records

0199US11587823B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 21, 2023·9 cites·20 claims
0299US11581337B2Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·7 cites·15 claims
0399US11569250B2Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·6 cites·20 claims
0499US11495618B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·5 cites·20 claims
0599US11423966B2Memory array staircase structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·23 cites·20 claims
0699US11404091B2Memory array word line routingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·17 cites·20 claims
0799US11355516B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·11 cites·20 claims
0898US11944015B2Magnetic memory using spin-orbit torqueEVERSPIN TECHNOLOGIES INC·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
0998US11943933B2Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·3 cites·20 claims
1098US11864393B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 2, 2024·2 cites·20 claims
1198US11776602B2Memory array staircase structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·6 cites·20 claims
1298US11729997B23D stackable memory and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·4 cites·20 claims
1398US11647634B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 9, 2023·4 cites·20 claims
1498US11616080B2Three-dimensional memory device with ferroelectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 28, 2023·4 cites·20 claims
1598US11581368B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·3 cites·19 claims
1698US11527553B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·5 cites·20 claims
1798US11411011B2Semiconductor structure having memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·5 cites·20 claims
1898US11362108B2Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·4 cites·20 claims
1997US12069868B2Gated ferroelectric memory cells for memory cell array and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·2 cites·20 claims
2097US12057471B2Ferroelectric tunnel junction devices with a sparse seed layer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·2 cites·20 claims
2197US11997855B2Back-end-of-line selector for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 28, 2024·3 cites·20 claims
2297US11980036B2Semiconductor structure having memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·2 cites·20 claims
2397US11956968B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·2 cites·16 claims
2497US11903216B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
2597US11647636B2Memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·3 cites·20 claims
2697US11600520B2Air gaps in memory array structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·3 cites·20 claims
2797US11444069B23D semiconductor package including memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
2896US12058869B2Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·2 cites·20 claims
2996US12002534B2Memory array word line routingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·2 cites·20 claims
3096US11910616B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·2 cites·20 claims
3196US11869971B2Multi-bit memory storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
3296US11856785B2Memory array and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
3396US11848381B2Methods of operating multi-bit memory storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·2 cites·20 claims
3496US11805652B23D RAM SL/BL contact modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·2 cites·20 claims
3596US11744080B2Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 29, 2023·3 cites·20 claims
3696US11532746B2Multi-bit memory storage device and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·5 cites·20 claims
3796US11355551B2Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·3 cites·20 claims
3896US11342497B2Magnetic memory using spin-orbit torqueEVERSPIN TECHNOLOGIES INC·Filed 2021·Granted May 24, 2022·3 cites·20 claims
3995US11830550B2Memory with FRAM and SRAM of ICTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·2 cites·20 claims
4095US11450362B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·4 cites·20 claims
4195US11404570B2Semiconductor devices with embedded ferroelectric field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
4294US12027412B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·1 cites·20 claims
4394US11087843B1Memory with FRAM and SRAM of IC and method for accessing memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·3 cites·20 claims
4493US11963363B2Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 16, 2024·2 cites·15 claims
4593US11915787B2Integrated circuit device and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
4693US11672126B2Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·2 cites·20 claims
4793US10937948B2Magnetic memory using spin-orbit torqueEVERSPIN TECHNOLOGIES INC·Filed 2020·Granted Mar 2, 2021·3 cites·20 claims
4893US10622547B2Magnetic memory using spin-orbit torqueEVERSPIN TECHNOLOGIES INC·Filed 2018·Granted Apr 14, 2020·9 cites·19 claims
4992US12317753B2Magnetic memory using spin-orbit torqueEVERSPIN TECHNOLOGIES INC·Filed 2024·Granted May 27, 2025·0 cites·20 claims
5092US2025365971A1Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 219 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →