Inventor · disambiguated record

Harry Chien

Also filed as: CHIEN HARRY

7 granted patents·21 pending applications·0 citations·filing 2022–2025

69Inventor score

Technology areasH10W H10D H10P

Files withTAIWAN SEMICONDUCTOR MFG CO LTD28

Top patents by PatentIndex Score

28 records

0179US2025351442A1Selective silicide for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0278US2025351424A1Void-free conductive contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0377US2025359278A1Semiconductor device with conductive liners over silicide structures and method of making the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0476US2025357323A1Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0576US2025351506A1Device-Level Interconnects for Stacked Transistor Structures and Methods of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0673US2025285962A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0770US12501657B2Selective silicide for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
0869US2024413211A1Device-Level Interconnects for Stacked Transistor Structures and Methods of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
0968US12433006B2Semiconductor device with conductive liners over silicide structures and method of making the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
1068US12272621B2Buried conductive structure in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
1167US2025226291A1Buried conductive structure in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1266US12494423B2Semiconductor device including stacked via contact and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
1365US2024021687A1Void-Free Conductive Contact FormationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
1464US12327788B2Gate to source drain interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
1560US12431431B2Conductive structure interconnects with downward projectionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
1656US2025022802A1Conductive Structures Of Integrated CircuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
1755US12439625B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
1855US2024405023A1Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
1955US2024429102A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2055US2025233074A1Methods for selective metal cap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2154US2024379758A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2254US2024379759A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2351US2023402278A1Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
2451US2024313075A1Method and device related to seamless metal contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2551US2023282729A1Work-Function Metal in Transistors and Method Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
2651US2023402366A1Semiconductor device including metal surrounding via contact and method of forming the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
2750US2024055491A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
2848US2023395429A1Conductive structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →