Inventor · disambiguated record
Hans S. Cho
Also filed as: CHO HANS · CHO HANS S · CHO HANS SE-YOUNG
51 granted patents·19 pending applications·425 citations·filing 2005–2020
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD28CHO HANS S13HEWLETT PACKARD ENTPR DEV LP8XIANYU WENXU4YIN HUAXIANG4
Top patents by PatentIndex Score
70 records- 0196US7575962B2Fin structure and method of manufacturing fin transistor adopting the fin structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 18, 2009·47 cites·23 claims
- 0296US7474811B1Nanowire photonic apparatus employing optical field confinementHEWLETT PACKARD DEVELOPMENT CO·Filed 2007·Granted Jan 6, 2009·61 cites·21 claims
- 0395US8258050B2Method of making light trapping crystalline structuresCHO HANS S·Filed 2009·Granted Sep 4, 2012·37 cites·18 claims
- 0495US7297615B2Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 20, 2007·32 cites·16 claims
- 0594US7566364B2Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 28, 2009·28 cites·19 claims
- 0693US8187905B2Method of forming a microlens and a method for manufacturing an image sensorYIN HUAXIANG·Filed 2010·Granted May 29, 2012·9 cites·30 claims
- 0791US8129710B2Plasmon enhanced nanowire light emitting diodeCHO HANS·Filed 2008·Granted Mar 6, 2012·28 cites·20 claims
- 0890US11625590B2Memristive multi-terminal spiking neuronUS GOV SEC NAVY·Filed 2020·Granted Apr 11, 2023·2 cites·4 claims
- 0989US8101473B2Rounded three-dimensional germanium active channel for transistors and sensorsCHO HANS·Filed 2009·Granted Jan 24, 2012·19 cites·14 claims
- 1088US9847378B2Resistive memory devices with a multi-component electrodeHEWLETT PACKARD ENTPR DEV LP·Filed 2014·Granted Dec 19, 2017·6 cites·15 claims
- 1188US8309404B2Poly-Si thin film transistor and organic light-emitting display having the sameYIN HUAXIANG·Filed 2011·Granted Nov 13, 2012·8 cites·3 claims
- 1288US8203137B2Photonic structureCHO HANS S·Filed 2009·Granted Jun 19, 2012·17 cites·17 claims
- 1388US7611932B2Method of manufacturing a thin film transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 3, 2009·13 cites·16 claims
- 1486US9847482B2Resistive memory devices with an oxygen-supplying layerHEWLETT PACKARD ENTPR DEV LP·Filed 2014·Granted Dec 19, 2017·5 cites·15 claims
- 1585US7999322B2Poly-Si thin film transistor and organic light-emitting display having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 16, 2011·6 cites·18 claims
- 1685US7859054B2Poly-Si thin film transistor and organic light-emitting display having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 28, 2010·9 cites·5 claims
- 1785US7557411B2Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 7, 2009·12 cites·16 claims
- 1884US8405062B2Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory deviceYIN HUAXIANG·Filed 2007·Granted Mar 26, 2013·9 cites·12 claims
- 1983US7642177B2Method of manufacturing nanowireSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 5, 2010·7 cites·18 claims
- 2082US8389388B2Photonic device and method of making the sameCHO HANS S·Filed 2009·Granted Mar 5, 2013·6 cites·15 claims
- 2181US7750424B2Microlens and an image sensor including a microlensSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 6, 2010·4 cites·24 claims
- 2279US10109346B2Apparatus having a memory cell and a shunt deviceHEWLETT PACKARD ENTPR DEV LP·Filed 2014·Granted Oct 23, 2018·3 cites·16 claims
- 2379US8803212B2Three-dimensional crossbar arrayCHO HANS S·Filed 2011·Granted Aug 12, 2014·4 cites·20 claims
- 2479US7511381B2Thin film transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 31, 2009·5 cites·11 claims
- 2578US8547727B2Memristive deviceWU WEI·Filed 2008·Granted Oct 1, 2013·8 cites·20 claims
- 2678US8502188B2Electrically actuated devicePICKETT MATTHEW D·Filed 2011·Granted Aug 6, 2013·4 cites·13 claims
- 2777US7662678B2Method of forming a more highly-oriented silicon layer and substrate having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 16, 2010·5 cites·27 claims
- 2874US7772711B2Semiconductor device including single crystal silicon layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 10, 2010·6 cites·22 claims
- 2973US8022408B2Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Sep 20, 2011·2 cites·17 claims
- 3073US8021936B2Method of manufacturing thin film transistorSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·3 cites·9 claims
- 3167US8569900B2Nanowire sensor with angled segments that are differently functionalizedQUITORIANO NATHANIEL J·Filed 2009·Granted Oct 29, 2013·4 cites·19 claims
- 3267US7531240B2Substrate with locally integrated single crystalline silicon layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 12, 2009·3 cites·6 claims
- 3366US10062842B2Composite selector electrodesHEWLETT PACKARD ENTPR DEV LP·Filed 2015·Granted Aug 28, 2018·1 cites·15 claims
- 3466US9911915B2Multiphase selectorsHEWLETT PACKARD ENTPR DEV LP·Filed 2014·Granted Mar 6, 2018·1 cites·14 claims
- 3566US9466793B2Memristors having at least one junctionCHO HANS S·Filed 2010·Granted Oct 11, 2016·2 cites·13 claims
- 3665US8445332B2Single crystal silicon rod fabrication methods and a single crystal silicon rod structureXIANYU WENXU·Filed 2007·Granted May 21, 2013·2 cites·17 claims
- 3765US7714330B2Si nanowire substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 11, 2010·2 cites·7 claims
- 3863US10008666B2Non-volatile resistive memory cellsCHO HANS S·Filed 2012·Granted Jun 26, 2018·2 cites·7 claims
- 3963US9715926B2Memristive device switching by alternating polarity pulsesHEWLETT PACKARD ENTPR DEV LP·Filed 2013·Granted Jul 25, 2017·2 cites·15 claims
- 4062US7439197B2Method of fabricating a capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 21, 2008·1 cites·13 claims
- 4161US8508009B2Microlens and an image sensor including a microlensYIN HUAXIANG·Filed 2010·Granted Aug 13, 2013·0 cites·12 claims
- 4259US8258049B2Method of manufacturing nanowireCHO HANS S·Filed 2009·Granted Sep 4, 2012·0 cites·14 claims
- 4355US2010041214A1Single crystal substrate and method of fabricating the sameCHO HANS S·Filed 2009·Application pending·0 cites
- 4453US7667300B2Semiconductor device including gate stack formed on inclined surface and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 23, 2010·0 cites·10 claims
- 4552US2008261333A1Methods of forming a material film, methods of forming a capacitor, and methods of forming a semiconductor memory device using the sameXIANYU WENXU·Filed 2008·Application pending·0 cites
- 4651US2009149007A1Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 4749US8012819B2Semiconductor device including gate stack formed on inclined surface and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Sep 6, 2011·0 cites·11 claims
- 4849US2006113596A1Single crystal substrate and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4948US7781853B2Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the sameHEWLETT PACKARD DEVELOPMENT CO·Filed 2007·Granted Aug 24, 2010·0 cites·20 claims
- 5048US2012025343A1Thermoelectric device having a variable cross-section connecting structureKUEKES PHILIP J·Filed 2009·Application pending·0 cites
Showing the top 50 of 70 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →